3-Ethyl-6-methylnaphthalene-2,7-diol

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 3-Ethyl-6-methylnaphthalene-2,7-diol
• 英文别名: 3-ethyl-6-methylnaphthalene-2,7-diol
• 化学式: C₁₃H₁₄O₂
• 分子量: 202.25
• InChiKey: ICNYNIBXMYIBKY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.6
• 重原子数：
  15
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.23
• 拓扑面积：
  40.5
• 氢给体数：
  2
• 氢受体数：
  2

文献信息

• US20140272722A1
  申请人：——

  公开号：US20140272722A1

  公开（公告）日：2014-09-18
• COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM AND RESIST UNDERLAYER FILM-FORMING METHOD, AND PATTERN-FORMING METHOD
  申请人：JSR CORPORATION

  公开号：US20150198882A9

  公开（公告）日：2015-07-16

  A composition for forming a resist underlayer film includes a polymer having a structural unit represented by a formula (1). Ar 1 , Ar 2 , Ar 3 and Ar 4 each independently represent a divalent aromatic hydrocarbon group or a divalent heteroaromatic group. A part or all of hydrogen atoms included in the divalent aromatic hydrocarbon group and the divalent heteroaromatic group represented by Ar 1 , Ar 2 , Ar 3 or Ar 4 may be substituted. R 1 represents a single bond or a divalent hydrocarbon group having 1 to 20 carbon atoms. A part or all of hydrogen atoms included in the divalent hydrocarbon group represented by R 1 may be substituted. The divalent hydrocarbon group represented by R 1 may have an ester group, an ether group or a carbonyl group in a structure thereof. Y represents a carbonyl group or a sulfonyl group. m is 0 or 1. n is 0 or 1.
• COMPOSITION FOR FILM FORMATION, FILM, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND
  申请人：JSR Corporation

  公开号：US20170154782A1

  公开（公告）日：2017-06-01

  A composition comprises a compound comprising a partial structure represented by formula (1) and comprising an intermolecular bond-forming group; and a solvent. X 1 and X 2 each independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with a spiro carbon atom and carbon atoms of an aromatic ring. R 1 and R 2 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group. a1 and a2 are each independently an integer of 0 to 8. n1 and n2 are each independently an integer of 0 to 2; k1 and k2 are each independently an integer of 0 to 8. A sum of k1 and k2 is no less than 1, and a sum of a1 and k1. A sum of a2 and k2 are no greater than 8.
• RESIST UNDERLAYER FILM-FORMING COMPOSITION, RESIST UNDERLAYER FILM, RESIST UNDERLAYER FILM-FORMING PROCESS, AND PRODUCTION METHOD OF PATTERNED SUBSTRATE
  申请人：JSR CORPORATION

  公开号：US20180046081A1

  公开（公告）日：2018-02-15

  A resist underlayer film-forming composition includes a solvent, and a compound comprising an aromatic ring. The solvent includes a first solvent having a normal boiling point of less than 156° C., and a second solvent having a normal boiling point of no less than 156° C. and less than 300° C. The resist underlayer film-forming composition is for use in forming a resist underlayer film to be overlaid on a patterned substrate. A production method of a patterned substrate includes applying the resist underlayer film-forming composition on a patterned substrate to obtain a coating film on the patterned substrate. The coating film is heated to obtain a resist underlayer film. A resist pattern is formed on an upper face side of the resist underlayer film. The resist underlayer film and the substrate are etched using the resist pattern as a mask.
• US9620378B1
  申请人：——

  公开号：US9620378B1

  公开（公告）日：2017-04-11