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Einecs 251-737-1 | 33910-44-0

中文名称
——
中文别名
——
英文名称
Einecs 251-737-1
英文别名
2-diazonio-5-[2-[[1-(6-diazonio-5-oxidonaphthalen-1-yl)sulfonyloxynaphthalen-2-yl]methyl]naphthalen-1-yl]oxysulfonylnaphthalen-1-olate
Einecs 251-737-1化学式
CAS
33910-44-0;148925-84-2
化学式
C41H24N4O8S2
mdl
——
分子量
764.8
InChiKey
MPKLHPFITUIYEL-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    12.9
  • 重原子数:
    55
  • 可旋转键数:
    8
  • 环数:
    8.0
  • sp3杂化的碳原子比例:
    0.02
  • 拓扑面积:
    206
  • 氢给体数:
    0
  • 氢受体数:
    10

文献信息

  • Semiconductor devices, semiconductor packages and methods of forming the same
    申请人:Taiwan Semiconductor Manufacturing Co., Ltd.
    公开号:US10665545B2
    公开(公告)日:2020-05-26
    Semiconductor devices, semiconductor packages and methods of forming the same are provided. One of the semiconductor device includes a dielectric layer and a connector. The dielectric layer includes a dielectric material and an additive, wherein the additive includes a compound represented by Chemical Formula 1. The connector is disposed in the dielectric layer.
    本文提供了半导体器件、半导体封装及其形成方法。其中一种半导体器件包括介电层和连接器。介电层包括介电材料和添加剂,其中添加剂包括由化学式 1 表示的化合物。连接器设置在介电层中。
  • Semiconductor devices and methods of forming the same
    申请人:Taiwan Semiconductor Manufacturing Co., Ltd.
    公开号:US11049812B2
    公开(公告)日:2021-06-29
    A semiconductor device includes a dielectric layer and a conductive structure in the dielectric layer. The dielectric layer includes a dielectric material and a compound represented by Chemical Formula 1. In Chemical Formula 1, R is the same as defined in the specification.
    一种半导体器件包括介电层和介电层中的导电结构。介电层包括一种介电材料和一种由化学式 1 表示的化合物。在化学式 1 中,R 与说明书中的定义相同。
  • SEMICONDCUTOR DEVICES, SEMICONDCUTOR PACKAGES AND METHODS OF FORMING THE SAME
    申请人:Taiwan Semiconductor Manufacturing Co., Ltd.
    公开号:US20200091073A1
    公开(公告)日:2020-03-19
    Semiconductor devices, semiconductor packages and methods of forming the same are provided. One of the semiconductor device includes a dielectric layer and a connector. The dielectric layer includes a dielectric material and an additive, wherein the additive includes a compound represented by Chemical Formula 1. The connector is disposed in the dielectric layer.
  • SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME
    申请人:Taiwan Semiconductor Manufacturing Co., Ltd.
    公开号:US20200286832A1
    公开(公告)日:2020-09-10
    A semiconductor device includes a dielectric layer and a conductive structure in the dielectric layer. The dielectric layer includes a dielectric material and a compound represented by Chemical Formula 1.
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