申请人:JSR CORPORATION
公开号:US20210181627A1
公开(公告)日:2021-06-17
A pattern-forming method includes: applying directly or indirectly on a substrate a radiation-sensitive composition containing a complex and an organic solvent to form a film; exposing the film to an ultraviolet ray, a far ultraviolet ray, an extreme ultraviolet ray, or an electron beam; and developing the film exposed, wherein the complex is represented by formula (1).
[M
m
L
n
Q
p
] (1)
In the formula (1), M represents a zinc atom, a cobalt atom, a nickel atom, a hafnium atom, a zirconium atom, a titanium atom, an iron atom, a chromium atom, a manganese atom, or an indium atom; and L represents a ligand derived from a compound represented by formula (2).
R
1
—CHR
3
—R
2
(2)
In the formula (2), R
1
and R
2
each independently represent —C(═O)—R
A
, —C(═O)—OR
B
, or —CN.
一种图案形成方法包括:在基板上直接或间接地涂覆含有复合物和有机溶剂的辐射敏感组合物以形成膜;将膜暴露于紫外线、远紫外线、极紫外线或电子束;和显影所暴露的膜,其中该复合物由式(1)表示。[MmLnQp] (1)在式(1)中,M代表锌原子、钴原子、镍原子、铪原子、锆原子、钛原子、铁原子、铬原子、锰原子或铟原子;L代表来自由式(2)表示的化合物的配体。R1—CHR3—R2(2)在式(2)中,R1和R2分别独立地表示—C(═O)—RA、—C(═O)—ORB或—CN。