N-(nonafluoro-n-butanesulfonyloxy)succinimide | 252937-66-9

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 卤代烷
• 英文名称: N-(nonafluoro-n-butanesulfonyloxy)succinimide
• 英文别名: 1-[(1,1,2,2,3,3,4,4,4-Nonafluorobutane-1-sulfonyl)oxy]pyrrolidine-2,5-dione；(2,5-dioxopyrrolidin-1-yl) 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate
• CAS: 252937-66-9
• 化学式: C₈H₄F₉NO₅S
• 分子量: 397.175
• InChiKey: YUOCJTKDRNYTFJ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2
• 重原子数：
  24
• 可旋转键数：
  5
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.75
• 拓扑面积：
  89.1
• 氢给体数：
  0
• 氢受体数：
  14

文献信息

• Novel carbazole derivative and chemically amplified radiation-sensitive resin composition
  申请人：——

  公开号：US20020172885A1

  公开（公告）日：2002-11-21

  A carbazole derivative of the following formula (1), 1 wherein R 1 and R 2 individually represent a hydrogen atom or a monovalent organic group, or R 1 and R 2 form, together with the carbon atom to which R 1 and R 2 bond, a divalent organic group having a 3-8 member carbocyclic structure or a 3-8 member heterocyclic structure, and R 3 represents a hydrogen atom or a monovalent organic group. The carbazole derivative is suitable as an additive for increasing sensitivity of a chemically amplified resist. A chemically amplified radiation-sensitive resin composition, useful as a chemically amplified resist, comprising the carbazole derivative is also disclosed.

  以下是该段文字的中文翻译： 一种具有以下式（1）的咔唑衍生物，其中R1和R2分别代表氢原子或一价有机基团，或者R1和R2与其结合的碳原子一起形成具有3-8个成员碳环结构或3-8个成员杂环结构的二价有机基团，R3代表氢原子或一价有机基团。该咔唑衍生物适用作为增加化学增感抗蚀性的添加剂。还公开了一种化学增感辐射敏感树脂组合物，该组合物用作化学增感抗蚀剂，包括该咔唑衍生物。
• Novel anthracene derivative and radiation-sensitive resin composition
  申请人：——

  公开号：US20030194634A1

  公开（公告）日：2003-10-16

  A novel anthracene derivative useful as an additive to a radiation-sensitive resin composition is disclosed. The anthracene derivative has the following formula (1), 1 wherein R 1 groups individually represent a hydroxyl group or a monovalent organic group having 1-20 carbon atoms, n is an integer of 0-9, X is a single bond or a divalent organic group having 1-12 carbon atoms, and R 2 represents a monovalent acid-dissociable group. The radiation-sensitive resin composition comprises the anthracene derivative of the formula (1), a resin insoluble or scarcely soluble in alkali, but becomes alkali soluble in the presence of an acid, and a photoacid generator. The composition is useful as a chemically-amplified resist for microfabrication utilizing deep ultraviolet rays, typified by a KrF excimer laser and ArF excimer laser.

  揭示了一种作为辐射敏感树脂组合物添加剂有用的新型蒽衍生物。该蒽衍生物具有以下化学式（1），其中R1基分别表示一个羟基或具有1-20个碳原子的一价有机基团，n是0-9的整数，X是一个单键或具有1-12个碳原子的二价有机基团，R2表示一价酸可解离基团。辐射敏感树脂组合物包括化学式（1）的蒽衍生物，一种在碱性条件下不溶或几乎不溶但在存在酸时变为碱溶的树脂，以及光酸发生剂。该组合物可用作化学放大光刻胶，用于利用KrF准分子激光和ArF准分子激光等深紫外线进行微加工。
• RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND
  申请人：Nakahara Kazuo

  公开号：US20120082934A1

  公开（公告）日：2012-04-05

  [Problem] To reduce the time required for a film to exhibit decreased hydrophobicity after liquid immersion lithography while allowing the surface of a film to exhibit high hydrophobicity during liquid immersion lithography. [Solution] A radiation-sensitive resin composition including (A) a polymer that includes a repeating unit (a1) and a fluorine atom, and (B) a photoacid generator, the repeating unit (a1) including a group shown by any of the following formulas (1-1) to (1-3).

  [问题] 在液体浸润光刻后，减少薄膜表现出降低的疏水性所需的时间，同时允许薄膜表面在液体浸润光刻期间表现出高疏水性。[解决方案] 包括（A）聚合物和（B）光酸发生剂的辐射敏感树脂组合物，其中重复单元（a1）包括重复单元（a1）和氟原子，并且（a1）包括以下任意一种公式（1-1）至（1-3）所示的基团。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP
  申请人：Shibayama Wataru

  公开号：US20110143149A1

  公开（公告）日：2011-06-16

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R 1 a R 2 b Si(R 3 ) 4-(a+b) . A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

  提供一种用于光刻的抗蚀底层膜形成组合物，用于形成可用作硬掩膜或底部防反射涂层的抗蚀底层膜，或者是不与抗蚀剂混合且具有比抗蚀剂更高的干法刻蚀速率的抗蚀底层膜。该组合物包括具有离子基的硅烷化合物，其中具有离子基的硅烷化合物是一种可水解的有机硅烷，其分子中具有一个离子基、其水解产物或水解缩合产物。该组合物用作光刻的抗蚀底层膜形成组合物。组合物包括具有离子基的硅烷化合物和不具有离子基的硅烷化合物，其中具有离子基的硅烷化合物在整个硅烷化合物中的摩尔比例小于1％，例如为0.01到0.95％。可水解的有机硅烷可以是式的化合物：R1aR2bSi（R3）4-（a+b）。通过将所述组合物按照权利要求1至14中的任一项涂布到半导体基片上并烘烤所得到的抗蚀底层膜。
• Methanofullerenes
  申请人：Robinson Alex Philip Graham

  公开号：US20140134843A1

  公开（公告）日：2014-05-15

  The present disclosure relates to novel methanofullerene derivatives, negative-type photoresist compositions prepared therefrom and methods of using them. The derivatives, their photoresist compositions and the methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.

  本公开涉及新型甲烷富勒烯衍生物，由此制备的负型光刻胶组合物以及使用它们的方法。这些衍生物、它们的光刻胶组合物和方法非常适合使用紫外线辐射、超极紫外线辐射、极紫外线辐射、X射线和带电粒子束进行精细图案加工。