Semiconductor device, resin composition for buffer coating, resin composition for die bonding, and resin composition for encapsulating
申请人:Ukawa Ken
公开号:US20060228562A1
公开(公告)日:2006-10-12
This invention can provide a semiconductor device exhibiting excellent anti-solder reflow resistance and higher reliability in surface mounting using a lead-free solder. In accordance with the present invention, there is provided a semiconductor device formed by placing a semiconductor chip whose surface is coated with a cured resin composition for buffer coating on a pad in a lead frame via a cured resin composition for die bonding and encapsulating the semiconductor chip on the pad in the lead frame by a cured resin composition for encapsulating, wherein the cured resin composition for buffer coating has an elastic modulus of 0.5 GPa to 2.0 GPa both inclusive at 25° C.; the cured resin composition for die bonding has an elastic modulus of 1 MPa to 120 MPa both inclusive at 260° C.; and the cured resin composition for encapsulating has an elastic modulus of 400 MPa to 1200 MPa both inclusive at 260° C. and a thermal expansion coefficient of 20 ppm to 50 ppm both inclusive at 260° C., and the product of the elastic modulus of the cured resin composition for encapsulating and thermal expansion coefficient of the cured resin composition for encapsulating is 8000 to 45000 both inclusive.
本发明可提供一种半导体器件,在使用无铅焊料进行表面贴装时,可表现出优异的抗回流焊性和更高的可靠性。根据本发明,提供了一种半导体器件,该半导体器件是将表面涂有缓冲涂层用固化树脂组合物的半导体芯片通过裸片接合用固化树脂组合物放置在引线框架的焊盘上,并通过封装用固化树脂组合物将半导体芯片封装在引线框架的焊盘上而形成的,其中缓冲涂层用固化树脂组合物在 25° C 时的弹性模量为 0.其中用于缓冲涂层的固化树脂组合物在 25 摄氏度时的弹性模量为 0.5 GPa 至 2.0 GPa;用于芯片粘接的固化树脂组合物在 260 摄氏度时的弹性模量为 1 MPa 至 120 MPa;用于封装的固化树脂组合物在 260 摄氏度时的弹性模量为 400 MPa 至 1200 MPa,热膨胀系数为 20 ppm 至 50 ppm、封装用固化树脂组合物的弹性模量和封装用固化树脂组合物的热膨胀系数的乘积为 8000 至 45000(含 8000 和 45000)。