Composition for forming a silicon-containing resist under layer film and patterning process
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US09312144B2
公开(公告)日:2016-04-12
A composition for forming a silicon-containing resist under layer film includes a silicon-containing compound which is obtained by hydrolysis, condensation or hydrolysis-condensation of a second silicon compound containing one or more compounds represented by the following general formula (1),
wherein R represents an organic group having 1 to 6 carbon atoms, Ra, Rb and Rc each represents a substituted or unsubstituted monovalent organic group having 1 to 30 carbon atoms, w=0 or 1, x=0, 1, 2 or 3, y=0, 1 or 2, z=0, 1, 2 or 3; when w=0, 5≧x+z≧1, and the case where (x, z)=(1, 1), (3, 0) or (0, 3) are not included; and when w=1, 7≧x+y+z≧1, and the case where (x, y, z)=(1, 1, 1) is not included. The composition forms a resist under layer film with extremely less number of coating defects, and excellent adhesiveness in fine pattern and etching selectivity.
形成含
硅抗蚀底层膜的组合物包括通过
水解、缩聚或
水解-缩聚获得的含
硅化合物,该含
硅化合物包含一个或多个由以下通式(1)表示的化合物,其中R代表具有1至6个碳原子的有机基,Ra、Rb和Rc分别代表具有1至30个碳原子的取代或未取代的一价有机基,w=0或1,x=0、1、2或3,y=0、1或2,z=0、1、2或3;当w=0时,5≥x+z≥1,并且不包括(x,z)=(1,1)、(3,0)或(0,3)的情况;当w=1时,7≥x+y+z≥1,并且不包括(x,y,z)=(1,1,1)的情况。该组合物形成抗蚀底层膜,具有极少的涂覆缺陷,并具有在细微图案中的优异粘附性和刻蚀选择性。