mono(3-butenyl) diglycidyl isocyanurate

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 三嗪类
• 英文名称: mono(3-butenyl) diglycidyl isocyanurate
• 英文别名: 1-But-3-enyl-3,5-bis(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione
• 化学式: C₁₃H₁₇N₃O₅
• 分子量: 295.295
• InChiKey: SRSYUOZWIVVDPF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.1
• 重原子数：
  21
• 可旋转键数：
  7
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.62
• 拓扑面积：
  86
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为反应物：
  描述：

  三乙氧基硅烷 、 mono(3-butenyl) diglycidyl isocyanurate 在 platinum(IV) oxide 作用下， 以 甲苯 为溶剂， 反应 17.0h， 生成 1,3-Bis(oxiran-2-ylmethyl)-5-(4-triethoxysilylbutyl)-1,3,5-triazinane-2,4,6-trione
  参考文献：
  名称：

  ISOCYANURATE EPOXY COMPOUND HAVING ALKOXYSILYL GROUP, METHOD OF PREPARING SAME, COMPOSITION INCLUDING SAME, CURED PRODUCT OF THE COMPOSITION, AND USE OF THE COMPOSITION

  摘要：

  公开号：

  EP2774929B1
• 作为产物：
  描述：

  1-But-3-enyl-1,3,5-triazinane-2,4,6-trione 、 环氧氯丙烷 在 potassium carbonate 作用下， 以 二甲基亚砜 为溶剂， 反应 20.0h， 生成 mono(3-butenyl) diglycidyl isocyanurate
  参考文献：
  名称：

  ISOCYANURATE EPOXY COMPOUND HAVING ALKOXYSILYL GROUP, METHOD OF PREPARING SAME, COMPOSITION INCLUDING SAME, CURED PRODUCT OF THE COMPOSITION, AND USE OF THE COMPOSITION

  摘要：

  公开号：

  EP2774929B1

文献信息

• GATE INSULATING FILM FORMING AGENT FOR THIN-FILM TRANSISTOR
  申请人：Maeda Shinichi

  公开号：US20100133518A1

  公开（公告）日：2010-06-03

  There is provided a novel gate insulating film forming material in consideration of not only initial electric properties immediately after the production of a gate insulating film, but also electric properties after other steps are performed while producing a thin-film transistor using the gate insulating film, and even reliability in the electric properties of the produced element. A gate insulating film forming agent for a thin-film transistor comprising an oligomer compound or a polymer compound, both of which contain a repeating unit having a triazinetrione ring containing a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and a solvent; a gate insulating film produced from the gate insulating film forming agent; a thin-film transistor having the gate insulating film; and a method for producing the gate insulating film or thin-film transistor.
• FORMING AGENT FOR GATE INSULATING FILM OF THIN FILM TRANSISTOR
  申请人：Maeda Shinichi

  公开号：US20110227056A1

  公开（公告）日：2011-09-22

  It is an object to provide a novel forming agent for a gate insulating film that not only provides high insulating properties for the gate insulating film but also takes account of the electric characteristics of a thin film transistor element. A forming agent for a gate insulating film of a thin film transistor characterized by comprising an oligomer compound or a polymer compound including a structural unit containing a pyrimidinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom; a gate insulating film formed by the forming agent; and a thin film transistor.
• US8436339B2
  申请人：——

  公开号：US8436339B2

  公开（公告）日：2013-05-07
• US8710491B2
  申请人：——

  公开号：US8710491B2

  公开（公告）日：2014-04-29
• US9534075B2
  申请人：——

  公开号：US9534075B2

  公开（公告）日：2017-01-03