[1]naphthoic acid-(2-piperidino-ethyl ester)

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: [1]naphthoic acid-(2-piperidino-ethyl ester)
• 英文别名: [1]Naphthoesaeure-(2-piperidino-aethylester)；2-piperidinoethyl 1-naphthalenecarboxylate；2-Piperidin-1-ylethyl naphthalene-1-carboxylate
• 化学式: C₁₈H₂₁NO₂
• 分子量: 283.37
• InChiKey: YEWTZYLBIHAYII-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  21
• 可旋转键数：
  5
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.39
• 拓扑面积：
  29.5
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  N-羟乙基哌啶 、 1-萘甲酰氯 在 氯仿 作用下， 生成 [1]naphthoic acid-(2-piperidino-ethyl ester)
  参考文献：
  名称：

  Synthetic Mydriatics. II

  摘要：

  DOI：

  10.1021/ja01254a053

文献信息

• POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：OHASHI Masaki

  公开号：US20100099042A1

  公开（公告）日：2010-04-22

  A polymerizable anion-containing sulfonium salt having formula (1) is provided wherein R 1 is H, F, methyl or trifluoromethyl, R 2 , R 3 and R 4 are C 1 -C 10 alkyl, alkenyl or oxoalkyl or C 6 -C 18 aryl, aralkyl or aryloxoalkyl, or two of R 2 , R 3 and R 4 may bond together to form a ring with S, A is a C 2 -C 20 hydrocarbon group having cyclic structure, and n is 0 or 1. The sulfonium salt generates a very strong sulfonic acid upon exposure to high-energy radiation. A resist composition comprising a polymer derived from the sulfonium salt is also provided.

  提供具有式（1）的可聚合含阴离子的亚砜盐，其中R1为H、F、甲基或三氟甲基，R2、R3和R4为C1-C10烷基、烯基或氧代烷基或C6-C18芳基、芳基烷基或芳基氧代烷基，或R2、R3和R4中的两个可以结合在一起形成与S的环，A为具有环状结构的C2-C20烃基团，n为0或1。该亚砜盐在暴露于高能辐射时生成非常强的磺酸。还提供了一种包含从该亚砜盐衍生的聚合物的抗蚀组合物。
• NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：OHASHI Masaki

  公开号：US20090061358A1

  公开（公告）日：2009-03-05

  Photoacid generators generate sulfonic acids of formula (1a) or (1c) upon exposure to high-energy radiation. R 1 —COOCH(CF 3 )CF 2 SO 3 + H + (1a) R 1 —O—COOCH(CF 3 )CF 2 SO 3 − H + (1c) R 1 is a C 20 -C 50 hydrocarbon group having a steroid structure. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）或（1c）的磺酸。R1—COOCH(CF3)CF2SO3+H+(1a)R1—O—COOCH(CF3)CF2SO3−H+(1c)R1是具有类固醇结构的C20-C50烃基。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物的使用。
• SULFONIUM SALT, ACID GENERATOR, RESIST COMPOSITION, PHOTOMASK BLANK, AND PATTERNING PROCESS
  申请人：OHASHI Masaki

  公开号：US20100143830A1

  公开（公告）日：2010-06-10

  A sulfonium salt has formula (1) wherein R 1 is a monovalent hydrocarbon group except vinyl and isopropenyl, R 2 , R 3 , and R 4 are alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl or may bond together to form a ring with the sulfur atom, and n is 1 to 3. A chemically amplified resist composition comprising the sulfonium salt is capable of forming a fine feature pattern of good profile after development due to high resolution, improved focal latitude, and minimized line width variation and profile degradation upon prolonged PED.

  一种硫铵盐的化学式为（1），其中R1是一种一价碳氢基团，但不包括乙烯基和异丙烯基，R2、R3和R4是烷基、烯基、氧代烷基、芳基、芳基烷基或芳基氧代烷基，或者它们可以相互连接形成与硫原子的环，并且n为1至3。包含该硫铵盐的化学增感抗剂组合物能够由于高分辨率、改善的焦距宽度、以及在长时间PED后最小化线宽变化和剖面降解而形成良好剖面的精细特征图案。
• PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Ohashi Masaki

  公开号：US20110003247A1

  公开（公告）日：2011-01-06

  The photoacid generator produces a sulfonic acid which has a bulky cyclic structure in the sulfonate moiety and a straight-chain hydrocarbon group and thus shows a controlled acid diffusion behavior and an adequate mobility. The PAG is fully compatible with a resin to form a resist composition which performs well during the device fabrication process and solves the problems of resolution, LWR, and exposure latitude.

  照片酸发生剂会产生一种含有笨重环状结构的磺酸基团和直链碳氢基团的磺酸，因此表现出受控的酸扩散行为和适度的活性。该PAG与树脂完全兼容，形成一个抗蚀剂组合物，在器件制造过程中表现良好，并解决了分辨率、LWR和曝光容限等问题。
• CARBOXYL-CONTAINING LACTONE COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SHINACHI Satoshi

  公开号：US20090274984A1

  公开（公告）日：2009-11-05

  Carboxyl-containing lactone compounds having formula (1) are novel wherein R 1 is H, F, methyl or trifluoromethyl, R 2 and R 3 are H or monovalent hydrocarbon groups, or R 2 and R 3 may together form an aliphatic ring, W is CH 2 , O or S, k 1 is an integer of 0 to 4, and k 2 is 0 or 1. They are useful as monomers to produce polymers which are transparent to radiation ≦500 nm. Radiation-sensitive resist compositions comprising the polymers as base resin exhibit excellent properties including resolution, LER, pattern density dependency and exposure margin.

  具有式（1）的含羧基内酯化合物是新型的，其中R1为H、F、甲基或三氟甲基，R2和R3为H或一价碳氢基团，或者R2和R3可以共同形成脂肪环，W为CH2、O或S，k1为0到4的整数，k2为0或1。它们可用作单体，生产透射辐射≦500nm的聚合物。以这些聚合物为基础树脂的辐射敏感抗蚀剂组合物具有优异的性能，包括分辨率、LER、图案密度依赖性和曝光余量。