The problem of the present invention is to provide a novel organometallic compound that can be used for film formation by CVD or ALD methods. The problem of the present invention is solved by the novel organic metal compound having a silyldiamine compound of the present invention as a ligand, and a thin film forming material containing this organic metal compound. In other words, the novel organic metal compound having a silyldiamine compound of the present invention as a ligand is volatile and can be suitably used as a semiconductor film forming material.【Selected drawing】None.
The problem of the present invention is to provide a novel organometallic compound that can be used for film formation by CVD or ALD methods. The problem of the present invention is solved by the novel organic metal compound having a silyldiamine compound of the present invention as a ligand, and a thin film forming material containing this organic metal compound. In other words, the novel organic metal compound having a silyldiamine compound of the present invention as a ligand is volatile and can be suitably used as a semiconductor film forming material.【Selected drawing】None.
Preparation of group 4 metal complexes of a bulky amido-fluorenyl ligand
作者:H.V. Rasika Dias、Ziyun Wang、Simon G. Bott
DOI:10.1016/0022-328x(95)05803-w
日期:1996.2
spectroscopic and structural characterization of new amido-fluorenyl ligand [Me3CN(H)Si(Me)2CH2C3H8}Li(THF)] (1) is reported. The treatment of 1 with BuLi followed by the reaction with Group4 metal chlorides led to crystalline, solvent free, metal complexes [(η1−NCME3)Si(Me)2CH2(η5−C13H8)}MCl2] () in good yield. The X-ray crystal structures of 4 and 5 are also reported. Both these compounds possess monomeric
The problem of the present invention is to provide a novel organometallic compound that can be used for film formation by CVD or ALD methods. The problem of the present invention is solved by the novel organic metal compound having a silyldiamine compound of the present invention as a ligand, and a thin film forming material containing this organic metal compound. In other words, the novel organic metal compound having a silyldiamine compound of the present invention as a ligand is volatile and can be suitably used as a semiconductor film forming material.【Selected drawing】None.