Et2SbTeEt involved the reaction of Et2SbBr with EtTeLi. The compounds are light sensitive, and some of them cannot be obtained pure because of facile radical decomposition or reverse dissociation to the corresponding R4E2 and R′2Te2. Thermal degradation of Et2SbTeEt in a hydrogen stream under conventional MOCVD condition gives a metal deposit containing Sb and Te in the ratio 1.6:1. The related compound
通过Et 4 Sb 2,Me 4 Sb 2或Et 4 As 2与i Pr 2 Te 2或Et 2 Te的反应制备了新的化合物Et 2 SbTeEt,Me 2 SbTeEt,Et 2 SbTe i Pr和Et 2 AsTeEt。2。到的Et替代路线2 SbTeEt涉及的Et反应2SbBr与EtTeLi。的化合物是光敏感的,并且它们中的一些不能因为容易自由基分解或反向解离成相应的R来获得纯的4 ë 2和R' 2
碲2。在常规MOCVD条件下,Et 2 SbTeEt在
氢气流中的热降解产生了比例为1.6:1的Sb和Te的
金属沉积物。相关化合物的Et 2 SbTeSbEt 2分发生反应用H 2在室温下,得到
碲金属和推测HSbEt 2。