α,α-bis(2-hydroxy-3,5-dimethylphenyl)-4-formyltoluene

• 分子结构分类: 有机化合物 - 苯类化合物 - 三苯基化合物
• 英文名称: α,α-bis(2-hydroxy-3,5-dimethylphenyl)-4-formyltoluene
• 英文别名: 4''-formyl-2,2'-dihydroxy-3,3',5,5'-tetramethyltriphenylmethane；4-[bis(2-hydroxy-3,5-dimethylphenyl)methyl]benzaldehyde；4-[Bis(2-hydroxy 3,5-dimethyl-phenyl)methyl]benzaldehyde
• 化学式: C₂₄H₂₄O₃
• 分子量: 360.453
• InChiKey: OEFZIHXDCKKRGY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.5
• 重原子数：
  27
• 可旋转键数：
  4
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.21
• 拓扑面积：
  57.5
• 氢给体数：
  2
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  对苯二甲醛 、 2,4-二甲基苯酚 在 对甲苯磺酸 作用下， 以 5,5-dimethyl-1,3-cyclohexadiene 为溶剂， 反应 66.0h， 以66%的产率得到α,α-bis(2-hydroxy-3,5-dimethylphenyl)-4-formyltoluene
  参考文献：
  名称：

  Novolac resin-containing resist underlayer film-forming composition using bisphenol aldehyde

  摘要：

  用于形成具有高干法蚀刻抗性、抗扭曲性并具有良好的平整性和嵌入性能的抗蚀底层膜形成组合物，包括通过使含有芳香环的有机化合物A和至少具有两个含酚羟基的芳香烃环团的醛B反应而获得的树脂，并具有芳香烃环团通过三级碳原子键合的结构。醛B可以是化合物的化学式（1）： 所得的树脂可能具有化学式（2）的单元结构： Ar1和Ar2各自是C6-40芳基团。含有芳香环的有机化合物A可能是芳香胺或含酚羟基的化合物。该组合物可能进一步含有溶剂、酸和/或酸发生剂，或交联剂。用于半导体生产的形成抗蚀图案，包括通过将抗蚀底层膜形成组合物涂覆在半导体衬底上并对其进行烘烤来形成抗蚀底层膜。

  公开号：

  US10017664B2

文献信息

• NOVOLAC RESIN-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION USING BISPHENOL ALDEHYDE
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20160068709A1

  公开（公告）日：2016-03-10

  Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): The obtained resin may have a unit structure of Formula (2): Ar 1 and Ar 2 each are C 6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent. Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.

  高干法蚀刻抗性、抗扭曲性、并对不平整部分表现出良好的平整和嵌入性的抗阻层薄膜形成组合物，包括通过反应含芳香环的有机化合物A和至少有两个芳香族碳环环团且具有酚羟基的醛B所获得的树脂，并具有芳香族碳环环团通过三级碳原子键合的结构。醛B可以是化合物式（1）的化合物：所获得的树脂可以具有式（2）的单元结构：其中Ar1和Ar2各自是C6-40芳基团。含芳香环的有机化合物A可以是芳香胺或含酚羟基的化合物。该组合物还可以含有溶剂、酸和/或酸发生剂，或交联剂。用于半导体生产的形成光刻图形，包括将抗阻层薄膜形成组合物涂覆在半导体基板上并烘烤以形成抗阻层薄膜。
• Sartori, Giovanni; Bigi, Franca; Maggi, Raimondo, Journal of the Chemical Society. Perkin transactions I, 1994, # 13, p. 1879 - 1882
  作者：Sartori, Giovanni、Bigi, Franca、Maggi, Raimondo、Pastorio, Andrea、Porta, Cecilia、Bonfanti, Gianmarco

  DOI：——

  日期：——
• Sartori Giovanni, Bigi Franca, Maggi Raimondo, Pastorio Andrea, Porta Cec+, J. Chem. Soc. Dalton Trans, (1994) N 13, S 1879-1882
  作者：Sartori Giovanni, Bigi Franca, Maggi Raimondo, Pastorio Andrea, Porta Cec+

  DOI：——

  日期：——
• Novolac resin-containing resist underlayer film-forming composition using bisphenol aldehyde
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US10017664B2

  公开（公告）日：2018-07-10

  Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1): The obtained resin may have a unit structure of Formula (2): Ar1 and Ar2 each are C6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and/or acid generator, or crosslinking agent. Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.

  用于形成具有高干法蚀刻抗性、抗扭曲性并具有良好的平整性和嵌入性能的抗蚀底层膜形成组合物，包括通过使含有芳香环的有机化合物A和至少具有两个含酚羟基的芳香烃环团的醛B反应而获得的树脂，并具有芳香烃环团通过三级碳原子键合的结构。醛B可以是化合物的化学式（1）： 所得的树脂可能具有化学式（2）的单元结构： Ar1和Ar2各自是C6-40芳基团。含有芳香环的有机化合物A可能是芳香胺或含酚羟基的化合物。该组合物可能进一步含有溶剂、酸和/或酸发生剂，或交联剂。用于半导体生产的形成抗蚀图案，包括通过将抗蚀底层膜形成组合物涂覆在半导体衬底上并对其进行烘烤来形成抗蚀底层膜。