1,1'-亚甲基双-2-萘基缩水甘油醚 | 1059-93-4

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 中文名称: 1,1'-亚甲基双-2-萘基缩水甘油醚
• 英文名称: 1,1'-methylenebis-2-naphthyl glycidyl ether
• 英文别名: bis-(2-oxiranylmethoxy-naphthalen-1-yl)-methane；β,β'-Dihydroxydinaphthylmethan-diglycidylether；2,2'-Dihydroxy-dinaphthyl-methan-diglycidaether；2-{[(1-{[2-(2-Oxiranylmethoxy)-1-naphthyl]methyl}-2-naphthyl)oxy]methyl}oxirane；2-[[1-[[2-(oxiran-2-ylmethoxy)naphthalen-1-yl]methyl]naphthalen-2-yl]oxymethyl]oxirane
• CAS: 1059-93-4
• 化学式: C₂₇H₂₄O₄
• mdl: MFCD00688170
• 分子量: 412.485
• InChiKey: PVHPHJYSXKSCKD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.7
• 重原子数：
  31
• 可旋转键数：
  8
• 环数：
  6.0
• sp3杂化的碳原子比例：
  0.26
• 拓扑面积：
  43.5
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  1,1'-亚甲基双-2-萘基缩水甘油醚 、 原儿茶酸 在 苄基三乙基氯化铵 作用下， 反应 12.0h， 生成 [3-[1-[[2-[3-(3,4-Dihydroxybenzoyl)oxy-2-hydroxypropoxy]naphthalen-1-yl]methyl]naphthalen-2-yl]oxy-2-hydroxypropyl] 3,4-dihydroxybenzoate
  参考文献：
  名称：

  RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM

  摘要：

  一种抗基础性过氧化氢水溶液的抗蚀底层膜组成物，在填充间隙和平坦化特性方面具有干法刻蚀特性；用于多层光阻方法的抗蚀底层膜的图案化过程和方法，该组成物包括：（a1）下列通式（x）表示的化合物中的一个、两个或两个以上化合物；和（b）有机溶剂，其中n01表示1到10的整数；当n01为2时，w表示亚砜基、磺酰基、醚基或具有2到50个碳原子的二价有机基团；当n01为2以外的整数时，w表示具有2到50个碳原子的n01价有机基团；y表示具有1到10个碳原子且可选地具有氧原子的单键或二价连接基团。

  公开号：

  US20180284614A1

文献信息

• MATERIAL FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210286266A1

  公开（公告）日：2021-09-16

  The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10 , and R 1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q 1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X 1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R 2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point. An object of the present invention is to provide a material for forming an organic film for forming an organic film having dry etching resistance, and also having high filling and planarizing properties and adhesion to a substrate.

  本发明是一种用于形成有机薄膜的材料，包括：由以下通用式（1）所示的化合物；和有机溶剂，在通用式（1）中，X代表具有2至50个碳原子或一个氧原子的价为“n”的有机基团，“n”表示1到10的整数，R1独立地表示以下通用式（2）中的任何一种，其中在通用式（2）中，虚线表示连接点到X，Q1表示含有羰基的一价有机基团，其中至少部分是以下通用式（3）所示的基团，其中在通用式（3）中，虚线表示连接点，X1表示单键或具有1到20个碳原子的二价有机基团，在有机基团具有芳香环时可选地具有取代基，R2表示氢原子、甲基基团、乙基基团或苯基团，**表示连接点。本发明的目的是提供一种用于形成具有干法刻蚀抗性的有机薄膜的材料，同时具有高填充和平整化性能以及对基底的粘附性。
• RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210397092A1

  公开（公告）日：2021-12-23

  A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH 2 ) p —; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R 01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

  多层光刻法中使用的抗蚀底层膜材料包含以下通式（1）所示的化合物（A）和有机溶剂（B），其中X独立地表示由以下通式（2）所示的一价有机基团；W包含“m”个部分结构，每个部分结构都独立地由以下式（3）所示；“m”和“n”分别表示1到10的整数；断裂的线表示连接臂；Z表示芳香基团；A表示单键或—O—（CH2）p—；“k”表示1到5的整数；“p”表示1到10的整数；R01表示氢原子或具有1到10个碳原子的一价有机基团。该材料能够形成在半导体器件制造过程中通过多层光刻法具有平坦化性能的抗蚀底层膜，以及用于形成抗蚀底层膜的图案化过程和方法。
• ORGANIC FILM COMPOSITION, PROCESS FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160336189A1

  公开（公告）日：2016-11-17

  An organic film composition including a compound represented by the following general formula (1), wherein n1 and n2 each independently represent 0 or 1; “W” represents a single bond or any of structures represented by the following formula (2); R 1 represents any of structures represented by the following general formula (3); m1 and m2 each independently represent an integer of 0 to 7, with the proviso that m1+m2 is 1 to 14. There can be provided an organic film composition for forming an organic film having dry etching resistance as well as advanced filling/planarizing characteristics.

  一种有机薄膜组合物，包括以下通式（1）所表示的化合物，其中n1和n2各自独立地表示0或1；“W”表示单键或以下式（2）所表示的任何结构之一；R1表示以下通式（3）所表示的任何结构之一；m1和m2各自独立地表示0到7的整数，但m1+m2为1到14。可以提供一种有机薄膜组合物，用于形成具有干法蚀刻抗性以及先进的填充/平坦化特性的有机薄膜。
• N-alkyl-n'-aryl-p-phenylenediamines as modifiers for epoxy resins
  申请人：CIBA-GEIGY AG

  公开号：EP0669357A2

  公开（公告）日：1995-08-30

  N, N'-Alkyl or aryl substituted p-phenylendiamines, particularly N-Alkyl-N'-aryl-p-phenylenediamines, when added at 2.5 to 12.5% by weight, based on the total weight of the epoxy resin and hardener, cause the epoxy resin after curing to exhibit substantial increases in physical properties, such as strength, stiffness, toughness and hot/wet properties, compared to the properties of the cured, but unmodified epoxy resin.

  N,N'-烷基或芳基取代的对苯二胺，特别是 N-烷基-N'-芳基对苯二胺，当添加量为环氧树脂和固化剂总重量的 2.5%至 12.5%（按重量计）时，可使固化后的环氧树脂与固化但未改性的环氧树脂相比，在强度、刚度、韧性和热/湿性能等物理性能方面有大幅提高。
• Resist underlayer film composition, patterning process, and method for forming resist underlayer film
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US10416563B2

  公开（公告）日：2019-09-17

  A resist underlayer film composition is excellent in resistance to a basic hydrogen peroxide aqueous solution in gap-filling and planarization characteristics having a dry etching characteristic; a patterning process and method for forming a resist underlayer film, wherein the resist underlayer film composition is used for a multilayer resist method, the composition comprising: (a1) one, or two or more, of a compound represented by following general formula (x); and (b) an organic solvent, wherein n01 represents an integer of 1 to 10; when n01 is 2, w represents a sulfinyl group, a sulfonyl group, an ether group, or a divalent organic group having 2 to 50 carbon atoms; when n01 is an integer other than 2, w represents an n01-valent organic group having 2 to 50 carbon atoms; and y represents a single bond or divalent connecting group having 1 to 10 carbon atoms and optionally having an oxygen atom.

  一种抗蚀剂底层薄膜组合物，在间隙填充和平面化特性方面对碱性过氧化氢水溶液具有优异的抗性，具有干蚀刻特性；一种形成抗蚀剂底层薄膜的图案化工艺和方法，其中抗蚀剂底层薄膜组合物用于多层抗蚀剂方法，该组合物包括：(a1) 由以下通式（x）表示的一种或两种以上化合物；以及 (b) 有机溶剂、 其中，n01 代表 1 至 10 的整数；当 n01 为 2 时，w 代表具有 2 至 50 个碳原子的亚磺酰基、磺酰基、醚基或二价有机基团；当 n01 为 2 以外的整数时，w 代表具有 2 至 50 个碳原子的 n01 价有机基团；以及 y 代表具有 1 至 10 个碳原子并可选择具有氧原子的单键或二价连接基团。