Copper complexes and process for formatiom of copper-containing thin films by using the same
申请人:Kadota Takumi
公开号:US20050080282A1
公开(公告)日:2005-04-14
Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing β-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I):
wherein Z is hydrogen or alkyl; X is a group represented by the formula (I-I), in which R
a
is alkylene, and each of R
b
, R
c
and R
d
is alkyl; and Y is an alkyl group or a group represented by the formula (I-I), in which R
a
is alkylene, and each of R
b
, R
c
and R
d
is alkyl.
含铜薄膜可以通过化学气相沉积工业上有利地形成,其中使用含有β-二酮配体的硅醚连接的二价铜配合物作为铜源。二价铜配合物的代表性示例由以下式(I)表示:其中Z为氢或烷基;X为由以下式(I-I)表示的基团,其中R为亚烷基,且Rb、Rc和Rd均为烷基;Y为烷基或由以下式(I-I)表示的基团,其中R为亚烷基,且Rb、Rc和Rd均为烷基。