申请人:Versum Materials US, LLC
公开号:US20180127592A1
公开(公告)日:2018-05-10
Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B:
as defined herein.
本文描述了形成硅氧化物薄膜的组合物和方法。在一个方面,该膜是从至少一种硅前体化合物沉积而成,其中至少一种硅前体化合物选自以下A和B式:如本文所定义。