1-naphtyldimethylsulfonium trifluoromethanesulfonate | 90555-42-3

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 1-naphtyldimethylsulfonium trifluoromethanesulfonate
• 英文别名: Dimethyl(naphthalen-1-yl)sulfanium;trifluoromethanesulfonate
• CAS: 90555-42-3
• 化学式: CF₃O₃S*C₁₂H₁₃S
• 分子量: 338.372
• InChiKey: YANSZSFMGHMKQD-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  3.13
• 重原子数：
  21
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.23
• 拓扑面积：
  66.6
• 氢给体数：
  0
• 氢受体数：
  6

反应信息

• 作为反应物：
  描述：

  1-naphtyldimethylsulfonium trifluoromethanesulfonate 在 tetrabutylammonium tetrafluoroborate 作用下， 以 乙腈 为溶剂， 生成
  参考文献：
  名称：

  锍盐单电子电化学还原裂解反应机理

  摘要：

  Mesure des potentiels de reduction inreversible, Ep, an unelectron pour 12 sels de sulfonium arylmethyl (alkylsubstitues) avec aryl=phenyl etnaphtyl-1。Cette 减少夹带 une 破裂 de la liaison σ, soufre-carbone dans les sels de sels, ce qui entraine uncomportementelectrochimique 不可逆

  DOI：

  10.1021/ja00327a010
• 作为产物：
  描述：

  1-奈硫酚 、 alkaline earth salt of/the/ methylsulfuric acid 在 sodium hydride 作用下， 以 二氯甲烷 为溶剂， 反应 15.5h， 生成 1-naphtyldimethylsulfonium trifluoromethanesulfonate
  参考文献：
  名称：

  锍盐单电子电化学还原裂解反应机理

  摘要：

  Mesure des potentiels de reduction inreversible, Ep, an unelectron pour 12 sels de sulfonium arylmethyl (alkylsubstitues) avec aryl=phenyl etnaphtyl-1。Cette 减少夹带 une 破裂 de la liaison σ, soufre-carbone dans les sels de sels, ce qui entraine uncomportementelectrochimique 不可逆

  DOI：

  10.1021/ja00327a010

文献信息

• Arylation of <i>ortho</i>-Hydroxyarylenaminones by Sulfonium Salts and Arenesulfonyl Chlorides: An Access to Isoflavones
  作者：Satenik Mkrtchyan、Viktor O. Iaroshenko

  DOI：10.1021/acs.joc.0c02294

  日期：2021.4.2

  diversities of bench-stable and easy-to-use sulfonium salts and arenesulfonyl chlorides. Both developed methods, namely the light-mediated photoredox and electrophilic arylation, showed good efficiency, and are feasible for the preparation of 3-arylchromones in good-to-excellent yields. This work showcases the first described attempt where the sulfonium salts and arenesulfonyl chlorides were successfully utilized

  本文中，我们公开了三种新方法，这些方法可通过大量稳定和易于使用的sulf盐和芳烃磺酰氯将邻羟基羟基亚胺基芳基化后，直接有效地合成3-芳基色酮。两种开发的方法，即光介导的光氧化还原和亲电芳基化，均显示出良好的效率，并且对于以良好至优异的产率制备3-芳基色酮是可行的。这项工作展示了首次描述的尝试，其中成功地利用了salts盐和芳烃磺酰氯来构建色酮杂环系统。
• Radiation-sensitive resin composition
  申请人：——

  公开号：US20020009668A1

  公开（公告）日：2002-01-24

  A radiation-sensitive resin composition comprising an acid-labile group-containing resin and a photoacid generator is disclosed. The resin has a structure of the formula (1), 1 wherein R 1 represents a hydrogen atom, a monovalent acid-labile group, an alkyl group having 1-6 carbon atoms which does not have an acid-labile group, or an alkylcarbonyl group having 2-7 carbon atoms which does not have an acid-labile group, X 1 represents a linear or branched fluorinated alkyl group having 1-4 carbon atoms, and R 2 represents a hydrogen atom, a linear or branched alkyl group having 1-10 carbon atoms, or a linear or branched fluorinated alkyl group having 1-10 carbon atoms. The resin composition exhibits high transmittance of radiation, high sensitivity, resolution, and pattern shape, and is useful as a chemically amplified resist in producing semiconductors at a high yield.

  公开了一种辐射敏感的树脂组合物，包括一个含有酸敏感基团的树脂和一个光酸发生剂。该树脂的结构式为(1)，其中R1代表氢原子、一价酸敏感基团、不含酸敏感基团的1-6个碳原子的烷基或不含酸敏感基团的2-7个碳原子的烷基酰基，X1代表线性或支链的含有1-4个碳原子的氟化烷基，R2代表氢原子、含有1-10个碳原子的线性或支链烷基，或含有1-10个碳原子的线性或支链氟化烷基。该树脂组合物表现出辐射的高透过率、高敏感度、分辨率和图案形状，可用于在高产率下生产半导体中的化学放大图案。
• METHOD OF FORMING PATTERN AND COMPOSITION FOR FORMING OF ORGANIC THIN-FILM FOR USE THEREIN
  申请人：Shimizu Daisuke

  公开号：US20100233635A1

  公开（公告）日：2010-09-16

  A method for forming a pattern contains (1) a step of forming an underlayer film containing (A) a radiation-sensitive acid generator capable of generating an acid upon exposure to radiation rays or (B) a radiation-sensitive base generator capable of generating a base upon exposure to radiation rays on a substrate; (2) a step of irradiating the underlayer film with radiation rays through a mask with a predetermined pattern to obtain an exposed underlayer film portion having been selectively exposed through the predetermined pattern; (3) a step of forming (C) an organic thin film on the underlayer film so as to attain chemical bonding of the exposed underlayer film portion with the organic thin-film formed on the exposed underlayer film portion; and (4) a step of removing the organic thin film formed on areas of the underlayer film other than the exposed underlayer film portion.

  一种形成图案的方法包括：（1）在基板上形成一个底层薄膜，该底层薄膜包含（A）一种辐射敏感的酸发生剂，能够在辐射射线的作用下产生酸，或者（B）一种辐射敏感的碱发生剂，能够在辐射射线的作用下产生碱；（2）通过一个预定图案的掩模，用辐射射线照射底层薄膜，以获得已通过预定图案选择性暴露的底层薄膜部分；（3）在底层薄膜上形成一层有机薄膜，以实现暴露的底层薄膜部分与形成在暴露的底层薄膜部分上的有机薄膜的化学键合；（4）去除除暴露的底层薄膜部分外的底层薄膜区域上形成的有机薄膜。
• Composition for resist underlayer film and method for producing the same
  申请人：JSR Corporation

  公开号：EP1045290A2

  公开（公告）日：2000-10-18

  Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1):         R1aSi(OR2)4-a     (1) wherein R1 represents a hydrogen atom, a fluorine atom or a univalent organic group, R2 represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2):         R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c     (2) wherein R3, R4, R5 and R6, which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R7 represents an oxygen atom or -(CH2)n-, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.

  本发明公开了一种用于抗蚀剂底层薄膜的组合物，该组合物在抗蚀剂图案的再现性、与抗蚀剂的粘附性、对抗蚀剂曝光后使用的显影液的耐受性方面表现优异，并且在抗蚀剂的氧灰化过程中减少了薄膜的损失；以及生产该组合物的方法，该组合物包括 (A) 至少一种选自以下组别的化合物的水解物和缩合物 (A-1) 由以下通式(1)代表的化合物： R1aSi(OR2)4-a (1) 其中 R1 代表氢原子、氟原子或单价有机基团，R2 代表单价有机基团，a 代表 0 至 2 的整数，以及 (A-2) 由下式通式 (2) 代表的化合物： R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c (2) 其中 R3、R4、R5 和 R6（可以相同或不同）分别代表单价有机基团，b 和 c（可以相同或不同）分别代表 0 至 2 的整数，R7 代表氧原子或-(CH2)n-，d 代表 0 或 1，n 代表 1 至 6 的整数；以及 (B) 通过紫外线照射和/或加热生成酸的化合物。
• Organosilicate resin formulation for use in microelectronic devices
  申请人：Dow Global Technologies Inc.

  公开号：EP2278611A1

  公开（公告）日：2011-01-26

  A curable organosilicate composition employed to form one or more layers in the fabrication of electronic devices comprises: (a) an alkoxy or acyloxy silane having at least one group containing ethylenic unsaturation which group is bonded to the silicon atom (b) an alkoxy or acyloxy silane having at least one group containing an aromatic ring which group is bonded to the silicon atom, (c) a latent acid catalyst, preferably one or both of a photoacid generator and a thermal acid generator, and (d) optionally an alkoxy or acyloxy silane having at least one C1-C6 alkyl group bonded to the silicon atom.

  一种可固化的有机硅组合物，用于在电子器件制造过程中形成一层或多层，包括 (a) 烷氧基或酰氧基硅烷，其至少一个基团含有乙烯不饱和度，该基团与硅原子键合 (b) 烷氧基或酰氧基硅烷，其至少一个基团含有与硅原子键合的芳香环、 (c) 潜酸催化剂，最好是光酸发生器和热酸发生器中的一种或两种，以及 (d) 可选的烷氧基或酰氧基硅烷，其硅原子上至少键合有一个 C1-C6 烷基。