8-methyl-naphthalene-2-sulfonic acid | 691359-61-2

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 8-methyl-naphthalene-2-sulfonic acid
• 英文别名: 8-Methyl-naphthalin-2-sulfonsaeure；8-Methyl-2-naphthalenesulfonic acid；8-methylnaphthalene-2-sulfonic acid
• CAS: 691359-61-2
• 化学式: C₁₁H₁₀O₃S
• 分子量: 222.265
• InChiKey: HMFSQLOMPHLGEJ-UHFFFAOYSA-N

物化性质

• 密度：
  1.366±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  2.3
• 重原子数：
  15
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.09
• 拓扑面积：
  62.8
• 氢给体数：
  1
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  甲基萘 在 硫酸 作用下， 生成 8-methyl-naphthalene-2-sulfonic acid
  参考文献：
  名称：

  Dziewonski; Kowalczyk, Bulletin International de l'Academie Polonaise des Sciences et des Lettres, Classe des Sciences Mathematiques et Naturelles, Serie A: Sciences Mathematiques, 1935, p. 559,561

  摘要：

  DOI：

文献信息

• TARGETING AN HIV-1 NEF-HOST CELL KINASE COMPLEX
  申请人：University of Pittsburgh - Of the Commonwealth System of Higher Education

  公开号：US20140128388A1

  公开（公告）日：2014-05-08

  Drug candidates for inhibition of HIV-1 replication can target Src family kinases (SFK), such as Hck, that interact with Nef protein of the virus. Compounds characterized by such inhibitory activity were identified via an assay for kinase activity of an SFK in a Nef:SFK complex. Illustrative of inhibitors identified using the kinase assay are various 2,3-diaminoquinaxolines and furo[2,3-d]pyrimidines. The inventive inhibitors were found to arrest HIV-1 viral replication in vitro.

  针对HIV-1复制的药物候选物可以针对Src家族激酶（SFK），例如与病毒的Nef蛋白相互作用的Hck。通过对Nef:SFK复合物中SFK的激酶活性进行测定，鉴定了具有这种抑制活性的化合物。使用激酶测定鉴定的抑制剂的例子包括各种2,3-二氨基喹啉和呋喃[2,3-d]嘧啶。发明的抑制剂被发现可以在体外阻止HIV-1病毒复制。
• DE665923
  申请人：——

  公开号：——

  公开（公告）日：——
• Process of preparing 1-methyl naphthalene-7-sulphonic acid and 1-methyl-7-hydroxynahpthalene
  申请人：GEN ANILINE WORKS INC

  公开号：US02107911A1

  公开（公告）日：1938-02-08
• Non Metal Tanning
  申请人：Reineking Claus

  公开号：US20130205516A1

  公开（公告）日：2013-08-15

  Tanned leather, skin or pelt is produced by non-metal tanning, comprising the step of tanning a bated hide, skin or pelt with a tanning agent (A), the tanning agent (A) being at least one compound of formula (I), wherein X signifies fluorine, chlorine and/or ( + NR 3 ) 0-1 , wherein R is a substituted C 1 to C 6 alkyl group or an unsubstituted C 1 to C 6 alkyl group, an unsubstituted C 6 to C 10 aryl group or a substituted C 6 to C 10 aryl group or a C 5 to C 6 heteroaryl group, R1 signifies hydrogen, C 1-8 -alkyl or an alkyleneoxy radical of formula (Ia), -(—C 2-3 alkylene-O—) q -H  (Ia) R2 signifies hydrogen or hydroxy, m signifies 1, 2 or 3, q is of from 1 to 10, M signifies hydrogen or an alkali metal cation or an ammonium cation, the ammonium cation being a protonated tertiary amine or a quaternary ammonium cation, in a tanning bath, the tanning bath having a pH of from 6 to 10 at the beginning of tanning step.
• ETCHING FLUID AND PRODUCTION METHOD FOR SILICON-BASED SUBSTRATE USING SAME
  申请人：WAKO PURE CHEMICAL INDUSTRIES, LTD.

  公开号：US20150125985A1

  公开（公告）日：2015-05-07

  It is the object of the present invention to provide an alkali etching solution for solar cell manufacturing, which is capable of forming uniformly a fine hubbly structure throughout a whole wafer on the surface of a wafer having a silicon as a main component, and still more is applicable to various wafers; and a method for manufacturing a silicon-based substrate for solar cell manufacturing, using the etching solution. The present invention relates to the alkali etching solution for solar cell manufacturing, comprising (A) a mono- or disulfonic acid or a salt thereof represented by the general formula [1], (B) an alkali compound, and (C) water; and a method for manufacturing a silicon-based substrate for solar cell manufacturing, characterized by etching a wafer having a silicon as a main component, using the etching solution, to form a hubbly structure at the surface of the wafer: wherein p moieties of R 1 each independently represents a hydrogen atom, a hydroxyl group or an alkyl group having 1 to 10 carbon atoms; q moieties of M each independently represents a hydrogen atom, an alkali metal atom, an ammonium (NH 4 ) group or a tetraalkylammonium (R 2 4 N) group (wherein R 2 represents an alkyl group having 1 to 4 carbon atoms); n represents 0 or 1; and p and q each independently represents 1 or 2}.