Organometal-containing acrylate or methacrylate derivatives and photoresists comprising the polymers thereof. Unlike conventional matrix polymers of photoresist, the polymers induce a difference in silicon content between exposed regions and unexposed regions of photoresists by releasing their silicon-containing side chains with the aid of acid in a chemical amplification manner. The difference in silicon content causes the exposed regions to be etched at a different rate from that of the unexposed regions under oxygen plasma. Thus, the photoresist material makes it possible to use a microlithographic process comprising a dry development step which can advantageously prevent the deformation or collapse of patterns which is aggravated as their aspect ratio increases, as well as the photoresist is economically more favorable than a top surface imaging system to which silylation on its top surface or a multi-level resist system to which wet development on its top layer must be applied, because the microlithographic process is very simple and no solvent is released.
含有有机
金属
丙烯酸酯或
甲基丙烯酸酯衍
生物的聚合物及其光刻胶。与传统的光刻胶基质聚合物不同,这些聚合物通过在
化学放大的方式下,释放它们含有
硅的侧链,从而在曝光区域和未曝光区域之间引起
硅含量的差异。
硅含量的差异使得曝光区域在氧等离子体下的蚀刻速率与未曝光区域不同。因此,这种光刻胶材料使得使用干法显影步骤的微影工艺成为可能,这种微影工艺可以有效地防止图形随着其纵横比的增加而变形或崩塌。此外,这种光刻胶比需要在其顶部表面进行
硅化处理的顶部成像系统或需要在其顶层进行湿法显影处理的多层光刻胶系统经济上更有优势,因为这种微影工艺非常简单,没有溶剂释放。