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1,1-bis(trimethylsilyl)ethanol | 60609-96-3

中文名称
——
中文别名
——
英文名称
1,1-bis(trimethylsilyl)ethanol
英文别名
1,1-Bis(trimethylsilyl)methanol
1,1-bis(trimethylsilyl)ethanol化学式
CAS
60609-96-3
化学式
C8H22OSi2
mdl
——
分子量
190.433
InChiKey
DZEOBARUYSTQEI-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    212.8±20.0 °C(Predicted)
  • 密度:
    0.829±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    2.49
  • 重原子数:
    11
  • 可旋转键数:
    2
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    1.0
  • 拓扑面积:
    20.2
  • 氢给体数:
    1
  • 氢受体数:
    1

SDS

SDS:cd474cf58a2b5fa394d5f029954ddb85
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反应信息

  • 作为产物:
    描述:
    三甲基硅乙酸酯三甲基氯硅烷sodium 作用下, 以 四氢呋喃 为溶剂, 以55%的产率得到1,1-bis(trimethylsilyl)ethanol
    参考文献:
    名称:
    Organometal-containing norbornene monomer, photoresist containing its polymer, manufacturing method thereof, and method of forming photoresist patterns
    摘要:
    本发明涉及具有包含有机金属的新型功能基团的去甲基脱环戊烯单体,如下式(I)或(II)所示,包含其聚合物的光刻胶、其制备方法,以及光刻胶图案形成方法。与现有光刻胶基质的聚合物不同,本发明描述的由去甲基脱环戊烯单体制备的聚合物是一种由光敏酸诱导的化学放大型,由于含有硅的侧链解离,导致曝光区域和未曝光区域之间的硅含量差异。硅含量的差异导致相对于氧等离子体的不同蚀刻速率,从而实现干法显影。
    公开号:
    US06607867B1
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文献信息

  • Organometal-containing acrylate or methacrylate derivatives and
    申请人:Korea Advanced Institute of Science and Technology
    公开号:US06103448A1
    公开(公告)日:2000-08-15
    Organometal-containing acrylate or methacrylate derivatives and photoresists comprising the polymers thereof. Unlike conventional matrix polymers of photoresist, the polymers induce a difference in silicon content between exposed regions and unexposed regions of photoresists by releasing their silicon-containing side chains with the aid of acid in a chemical amplification manner. The difference in silicon content causes the exposed regions to be etched at a different rate from that of the unexposed regions under oxygen plasma. Thus, the photoresist material makes it possible to use a microlithographic process comprising a dry development step which can advantageously prevent the deformation or collapse of patterns which is aggravated as their aspect ratio increases, as well as the photoresist is economically more favorable than a top surface imaging system to which silylation on its top surface or a multi-level resist system to which wet development on its top layer must be applied, because the microlithographic process is very simple and no solvent is released.
    含有有机金属丙烯酸酯或甲基丙烯酸酯衍生物的聚合物及其光刻胶。与传统的光刻胶基质聚合物不同,这些聚合物通过在化学放大的方式下,释放它们含有硅的侧链,从而在曝光区域和未曝光区域之间引起硅含量的差异。硅含量的差异使得曝光区域在氧等离子体下的蚀刻速率与未曝光区域不同。因此,这种光刻胶材料使得使用干法显影步骤的微影工艺成为可能,这种微影工艺可以有效地防止图形随着其纵横比的增加而变形或崩塌。此外,这种光刻胶比需要在其顶部表面进行硅化处理的顶部成像系统或需要在其顶层进行湿法显影处理的多层光刻胶系统经济上更有优势,因为这种微影工艺非常简单,没有溶剂释放。
  • An efficient method for the preparation of 1,1-bis(trimethylsilyl)alkan-1-ol
    作者:Isao Kuwajima、Toshio Sato、Naoki Minami、Toru Abe
    DOI:10.1016/s0040-4039(01)91624-7
    日期:1976.5
  • Synthesis of Bis(trimethylsilyl) Ketone and Reactions with Organometallic Compounds.
    作者:Ming Pan、Tore Benneche、Petros Mamos、Nikolaos Karamanos、Dionissios Papaioannou、George W. Francis、Teófilo Rojo
    DOI:10.3891/acta.chem.scand.52-1141
    日期:——
    Bis(trimethylsilyl) ketone (1) has been prepared by hydrolysis of the cr-chloro ether 3a on silica gel. Reaction of ketone 1 with organoaluminium, organomagnesium and organolithium compounds gave addition products and/or bis(trimethylsilyl)methanol(5).
  • Organometal-containing norbornene monomer, photoresist containing its polymer, manufacturing method thereof, and method of forming photoresist patterns
    申请人:Korea Advanced Institute of Science and Technology
    公开号:US06607867B1
    公开(公告)日:2003-08-19
    The present invention relates to norbornene monomers with a novel functional group containing an organometal as shown in the following Formula (I) or (II), a photoresist containing its polymers, manufacturing method thereof, and a method of forming photoresist patterns. Unlike existing polymers for photoresist matrix, polymers made by norbornene monomers described in the present invention is a chemical amplification type induced by photosensitive acids and can result in difference in silicon content between the exposed area and unexposed area due to dissociation of side chain containing silicon. The difference in the silicon content results in different etch rate with respect to oxygen plasma which makes dry developing possible.
    本发明涉及具有包含有机金属的新型功能基团的去甲基脱环戊烯单体,如下式(I)或(II)所示,包含其聚合物的光刻胶、其制备方法,以及光刻胶图案形成方法。与现有光刻胶基质的聚合物不同,本发明描述的由去甲基脱环戊烯单体制备的聚合物是一种由光敏酸诱导的化学放大型,由于含有硅的侧链解离,导致曝光区域和未曝光区域之间的硅含量差异。硅含量的差异导致相对于氧等离子体的不同蚀刻速率,从而实现干法显影。
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