Organometal-containing acrylate or methacrylate derivatives and
申请人:Korea Advanced Institute of Science and Technology
公开号:US06103448A1
公开(公告)日:2000-08-15
Organometal-containing acrylate or methacrylate derivatives and photoresists comprising the polymers thereof. Unlike conventional matrix polymers of photoresist, the polymers induce a difference in silicon content between exposed regions and unexposed regions of photoresists by releasing their silicon-containing side chains with the aid of acid in a chemical amplification manner. The difference in silicon content causes the exposed regions to be etched at a different rate from that of the unexposed regions under oxygen plasma. Thus, the photoresist material makes it possible to use a microlithographic process comprising a dry development step which can advantageously prevent the deformation or collapse of patterns which is aggravated as their aspect ratio increases, as well as the photoresist is economically more favorable than a top surface imaging system to which silylation on its top surface or a multi-level resist system to which wet development on its top layer must be applied, because the microlithographic process is very simple and no solvent is released.
Synthesis of Bis(trimethylsilyl) Ketone and Reactions with Organometallic Compounds.
作者:Ming Pan、Tore Benneche、Petros Mamos、Nikolaos Karamanos、Dionissios Papaioannou、George W. Francis、Teófilo Rojo
DOI:10.3891/acta.chem.scand.52-1141
日期:——
Bis(trimethylsilyl) ketone (1) has been prepared by hydrolysis of the cr-chloro ether 3a on silica gel. Reaction of ketone 1 with organoaluminium, organomagnesium and organolithium compounds gave addition products and/or bis(trimethylsilyl)methanol(5).
Organometal-containing norbornene monomer, photoresist containing its polymer, manufacturing method thereof, and method of forming photoresist patterns
申请人:Korea Advanced Institute of Science and Technology
公开号:US06607867B1
公开(公告)日:2003-08-19
The present invention relates to norbornene monomers with a novel functional group containing an organometal as shown in the following Formula (I) or (II), a photoresist containing its polymers, manufacturing method thereof, and a method of forming photoresist patterns.
Unlike existing polymers for photoresist matrix, polymers made by norbornene monomers described in the present invention is a chemical amplification type induced by photosensitive acids and can result in difference in silicon content between the exposed area and unexposed area due to dissociation of side chain containing silicon. The difference in the silicon content results in different etch rate with respect to oxygen plasma which makes dry developing possible.