FILM-FORMING MATERIAL, SILICON-CONTAINING INSULATING FILM AND METHOD FOR FORMING THE SAME
申请人:Akiyama Masahiro
公开号:US20100140754A1
公开(公告)日:2010-06-10
Disclosed is a silicon-containing film-forming material which contains an organosilane compound represented by the following general formula (1). (In the formula, R1-R4 may be the same or different and represent a hydrogen atom, an alkyl group having 1-4 carbon atoms, a vinyl group or a phenyl group; R5 represents an alkyl group having 1-4 carbon atoms, an acetyl group or a phenyl group; n represents an integer of 1-3; and m represents an integer of 1-2.)
A method of producing a silicon compound shown by the following general formula (7) includes reacting an organomagnesium compound shown by the following general formula (1) with an organosilane compound shown by the following general formula (2) in a solvent that contains at least one compound selected from a compound shown by the following general formula (3), a compound shown by the following general formula (4), a compound shown by the following general formula (5), and a compound shown by the following general formula (6).