2-萘基磺酰基丙酸 | 32385-30-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 中文名称: 2-萘基磺酰基丙酸
• 中文别名: 3-(2-萘基磺酰基)丙酸
• 英文名称: 2-naphthylsulfonylpropionic acid
• 英文别名: β-(2-Naphthylsulfonyl)-propionsaeure；3-(naphthalene-2-sulfonyl)-propionic acid；3-(Naphthalin-2-sulfonyl)-propionsaeure；3-(2-Naphthylsulfonyl)propanoic acid；3-naphthalen-2-ylsulfonylpropanoic acid
• CAS: 32385-30-1
• 化学式: C₁₃H₁₂O₄S
• mdl: MFCD00222810
• 分子量: 264.302
• InChiKey: OSYQPWIOAFNQLP-UHFFFAOYSA-N

物化性质

• 沸点：
  548.7±42.0 °C(Predicted)
• 密度：
  1.369±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  0.6
• 重原子数：
  18
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.153
• 拓扑面积：
  79.8
• 氢给体数：
  1
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  3-(萘-2-磺酰基)-丙腈 在 盐酸 作用下， 生成 2-萘基磺酰基丙酸
  参考文献：
  名称：

  Achmatowicz; Michalski, Roczniki Chemii, 1956, vol. 30, p. 243,Tab.2 nach S.246,250

  摘要：

  DOI：

文献信息

• Abdel-Wahab, Aboel-Magd A.; El-Khawaga, Ahmed M.; El-Zohry, Maher F., Phosphorus and Sulfur and the Related Elements, 1984, vol. 19, p. 31 - 44
  作者：Abdel-Wahab, Aboel-Magd A.、El-Khawaga, Ahmed M.、El-Zohry, Maher F.、Khalaf, Ali A.

  DOI：——

  日期：——
• SALTS OF PAROXETINE
  申请人：SMITHKLINE BEECHAM PLC

  公开号：EP1091958A1

  公开（公告）日：2001-04-18
• RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20170045820A1

  公开（公告）日：2017-02-16

  A composition for forming a resist underlayer film which make possible to form a desired high-adhesion resist pattern. A resist underlayer film-forming composition for lithography containing a polymer having the following structure Formula (1) or (2) at a terminal of a polymer chain, crosslinker, compound promoting crosslinking reaction, and organic solvent. (wherein R 1 is a C 1-6 alkyl group optionally having a substituent, phenyl group, pyridyl group, halogeno group, or hydroxy group, R 2 is a hydrogen atom, a C 1-6 alkyl group, hydroxy group, halogeno group, or ester group of —C(═O)O—X wherein X is a C 1-6 alkyl group optionally having a substituent, R 3 is a hydrogen atom, a C 1-6 alkyl group, hydroxy group, or halogeno group, R 4 is a direct bond or divalent C 1-8 organic group, R 5 is a divalent C 1-8 organic group, A is an aromatic ring or heteroaromatic ring, t is 0 or 1, and u is 1 or 2.)
• METHOD OF FORMING A MULTILAYER STRUCTURE
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20180282165A1

  公开（公告）日：2018-10-04

  Compositions comprising a liquid carrier and certain MX/graphitic carbon precursors are useful in forming multilayer structures having an MX layer and a graphitic carbon layer disposed on a substrate, wherein the MX layer is interposed between the substrate and the graphitic carbon layer in the multilayer structure.
• US9910354B2
  申请人：——

  公开号：US9910354B2

  公开（公告）日：2018-03-06