Silicon compound, silicon-containing compound, composition for forming resits underlayer film containing the same and patterning process
申请人:Shin-Etsu Chemical Co., Ltd.
公开号:EP2657240A1
公开(公告)日:2013-10-30
The invention provides a silicon compound represented by the following general formula (A-1) or (A-2),
wherein, R represents a hydrocarbon group having 1 to 6 carbon atoms, R1 and R2 represent an acid labile group, R3 represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms, k represents an integer of 1 or 2, m represents an integer of 0, 1, or 2, and n represents an integer of 0 or 1.
There can be provided a resist underlayer film that can be applied not only to a resist pattern formed by a hydrophilic organic compound obtained in negative development but also to a resist pattern composed of a hydrophobic compound obtained in conventional positive development.
该发明提供了一个由以下一般式(A-1)或(A-2)表示的硅化合物,其中,R代表具有1至6个碳原子的碳氢基团,R1和R2代表酸敏感基团,R3代表氢原子或具有1至30个碳原子的一价有机基团,k代表1或2的整数,m代表0、1或2的整数,n代表0或1的整数。可以提供一种抗蚀底层膜,不仅可应用于由负显影获得的亲水有机化合物形成的抗蚀图案,还可应用于由传统正显影获得的疏水化合物组成的抗蚀图案。