2-Hydroxy-7-methyl-1,2-dihydronaphthalene-2-carboxylic acid | 143355-55-9

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 2-Hydroxy-7-methyl-1,2-dihydronaphthalene-2-carboxylic acid
• 英文别名: 2-hydroxy-7-methyl-1H-naphthalene-2-carboxylic acid
• CAS: 143355-55-9
• 化学式: C₁₂H₁₂O₃
• 分子量: 204.22
• InChiKey: LJQRRWWJBLUADF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.8
• 重原子数：
  15
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.25
• 拓扑面积：
  57.5
• 氢给体数：
  2
• 氢受体数：
  3

文献信息

• Method of forming pattern, method of manufacturing semiconductor device, and pattern-forming material
  申请人：Kioxia Corporation

  公开号：US11410848B2

  公开（公告）日：2022-08-09

  A method of forming a pattern of an embodiment includes: forming an etch mask on a film to be processed by using a pattern-forming material containing an organic polymer; and patterning the etch mask. In the method of the embodiment, the organic polymer contains 70 atom % or more carbon atoms having an sp2 orbital and 5 atom % or more carbon atoms having an sp3 orbital among the carbon atoms constituting the organic polymer. The patterned etch mask is used for etching of the film to be processed with a gas containing a fluorine atom.

  一种形成实施例图案的方法包括：使用含有有机聚合物的图案形成材料在待处理薄膜上形成蚀刻掩膜；以及对蚀刻掩膜进行图案化。在本实施例的方法中，有机聚合物包含 70 个或更多具有 sp2 轨道的碳原子和 5 个或更多具有 sp3 轨道的碳原子。图案化蚀刻掩膜用于用含氟原子的气体蚀刻待处理薄膜。
• METHOD OF FORMING PATTERN, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND PATTERN-FORMING MATERIAL
  申请人：Kioxia Corporation

  公开号：US20210296116A1

  公开（公告）日：2021-09-23

  A method of forming a pattern of an embodiment includes: forming an etch mask on a film to be processed by using a pattern-forming material containing an organic polymer; and patterning the etch mask. In the method of the embodiment, the organic polymer contains 70 atom % or more carbon atoms having an sp 2 orbital and 5 atom % or more carbon atoms having an sp 3 orbital among the carbon atoms constituting the organic polymer. The patterned etch mask is used for etching of the film to be processed with a gas containing a fluorine atom.