Pentacosafluorododecane-1-sulfonic acid sodium salt | 1260224-54-1

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 卤代烷
• 英文名称: Pentacosafluorododecane-1-sulfonic acid sodium salt
• 英文别名: sodium;1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,11,11,12,12,12-pentacosafluorododecane-1-sulfonate
• CAS: 1260224-54-1
• 化学式: C12F25NaO3S
• 分子量: 722.14
• InChiKey: ISSKPZWQMGEHLZ-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  4.04
• 重原子数：
  42
• 可旋转键数：
  11
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  65.6
• 氢给体数：
  0
• 氢受体数：
  28

文献信息

• Composition for film formation and material for insulating film formation
  申请人：JSR CORPORATION

  公开号：US20020172652A1

  公开（公告）日：2002-11-21

  A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.

  一种用于制备薄膜的组合物，能够形成具有低介电常数特性、抗开裂性、弹性模量和对基底的附着力优异的涂层膜，并可用作半导体器件中的层间绝缘膜材料等。该制膜组合物包含（A）至少一种选自芳香族聚芳烃和芳香族聚（芳烃醚）的成员，（B）聚乙烯基硅氧烷和（C）有机溶剂。
• FIELD EFFECT TRANSISTOR
  申请人：TORAY INDUSTRIES, INC.

  公开号：US20160035457A1

  公开（公告）日：2016-02-04

  There is provided a field effect transistor which comprises a gate insulating layer, a gate electrode, a semiconductor layer, a source electrode and a drain electrode. The gate insulating layer contains an organic compound that contains a silicon-carbon bond and a metal compound that contains a bond between a metal atom and an oxygen atom; and the metal atoms are contained in the gate insulating layer in an amount of 10 to 180 parts by weight with respect to 100 parts by weight of the total of carbon atoms and silicon atoms. This field effect transistor (FET) has high mobility and a low voltage of the threshold value, while being suppressed in leak current.

  提供了一种场效应晶体管，包括栅绝缘层、栅电极、半导体层、源极电极和漏极电极。栅绝缘层包含一种含有硅碳键的有机化合物和一种含有金属原子和氧原子之间键的金属化合物；金属原子在栅绝缘层中的含量为100份碳原子和硅原子的总重量中的10至180份重量。该场效应晶体管具有高迁移率和低阈值电压，同时抑制泄漏电流。
• Composition for film formation, method of film formation, and silica-based film
  申请人：JSR Corporation

  公开号：EP1127929A2

  公开（公告）日：2001-08-29

  A composition for film formation which is capable of giving a silica-based coating film having an exceeding low dielectric constant and improved mechanical strength and useful as an interlayer insulating film in semiconductor devices and the like, a process for producing the composition, and a silica-based film obtained from the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing one or more silane compounds, and (B) an organic solvent.

  一种用于成膜的组合物，该组合物能够生成具有超低介电常数和更高机械强度的硅基涂膜，并可用作半导体器件等的层间绝缘膜；一种生产该组合物的工艺；以及一种由该组合物生成的硅基涂膜。该组合物包括 (A) 通过水解和缩合一种或多种硅烷化合物而得到的水解和缩合产物，以及 (B) 有机溶剂。
• Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor
  申请人：JSR Corporation

  公开号：EP1295924A2

  公开（公告）日：2003-03-26

  A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.

  一种叠层薄膜、一种生产叠层薄膜的方法、一种由叠层薄膜构成的绝缘薄膜，以及一种使用该绝缘薄膜的半导体衬底。叠层薄膜包括两种或两种以上平均回转半径相差 5 nm 或更多的烷氧基硅烷水解缩合物薄膜，或介电常数相差 0.3 或更多的烷氧基硅烷水解缩合物薄膜。叠层薄膜的获得方法是先涂覆平均回转半径小于 10 纳米的化合物（B），再涂覆平均回转半径为 10 至 30 纳米的化合物（A），然后加热。叠层薄膜可提供与 CVD 薄膜具有优异附着力的电介质薄膜（半导体衬底）。
• Insulation film
  申请人：JSR Corporation

  公开号：EP1427004A2

  公开（公告）日：2004-06-09

  An insulation film comprising an organosilicon polymer and an organic polymer such as polyarylene, polyarylene ether, polyimide, and fluororesin is disclosed, wherein the organosilicon polymer has a relative dielectric constant of 4 or less and has a dry etching selection ratio of 1/3 or less to silicon oxide, fluorine-doped silicon oxide, organosilicate glass, carbon-doped silicon oxide, methyl silsesquioxane, hydrogen silsesquioxane, a spin-on-glass, or polyorganosiloxane. The insulation film is used as an etching stopper or a hard mask in a dry etching process of interlayer dielectric films for semiconductors and can produce semiconductors having excellent precision with minimal damages.

  本发明公开了一种由有机硅聚合物和有机聚合物（如聚芳烯、聚芳烯醚、聚酰亚胺和氟树脂）组成的绝缘膜，其中有机硅聚合物的相对介电常数为 4 或以下，与氧化硅、掺氟氧化硅、有机硅玻璃、掺碳氧化硅、甲基硅倍半氧烷、氢硅倍半氧烷、旋光性玻璃或聚有机硅氧烷的干蚀刻选择比为 1/3 或以下。绝缘膜在半导体层间介质膜的干法蚀刻工艺中用作蚀刻挡板或硬掩膜，能以最小的损伤生产出精度极高的半导体。