6,13-dihydro-6,13-epithiomethanopentacen-16-one | 783321-43-7

• 分子结构分类: 有机化合物 - 苯类化合物 - 并四苯
• 英文名称: 6,13-dihydro-6,13-epithiomethanopentacen-16-one
• 英文别名: 23-Thiahexacyclo[10.10.2.02,11.04,9.013,22.015,20]tetracosa-2,4,6,8,10,13,15,17,19,21-decaen-24-one
• CAS: 783321-43-7
• 化学式: C₂₃H₁₄OS
• 分子量: 338.43
• InChiKey: ZOHPTJOLXKYIMD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.8
• 重原子数：
  25
• 可旋转键数：
  0
• 环数：
  7.0
• sp3杂化的碳原子比例：
  0.09
• 拓扑面积：
  42.4
• 氢给体数：
  0
• 氢受体数：
  2

反应信息

• 作为反应物：
  描述：

  6,13-dihydro-6,13-epithiomethanopentacen-16-one 以100%的产率得到并五苯
  参考文献：
  名称：

  Pentacene precursors for solution-processed OFETs

  摘要：

  15-Acetoxy- and 15-hydroxy-6,13-dihydro-6,13-ethanopentacenes sublimed over 300 degrees C and no pentacene was formed below the temperature. The precursors bearing chlorinated epithiomethano bridges suffered complicated decomposition to give oligomeric pentacene derivatives. The precursor bearing an epithio-oxomethano bridge underwent smooth and clean conversion to pentacene by heat or light. An organic field-effect transistor fabricated by the spin-coating method of the precursor followed by light irradiation at 120 degrees C showed a good FET performance of mu=2.5 x 10(-2) cm(2) V-1 s(-1) and on/off ratio=3.8 x 10(4). (C) 2010 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.tet.2010.06.051
• 作为产物：
  描述：

  16,16-dichloro-6,13-dihydro-6,13-epithiomethanopentacene 在 silica gel 作用下， 以 二氯甲烷 为溶剂， 以79%的产率得到6,13-dihydro-6,13-epithiomethanopentacen-16-one
  参考文献：
  名称：

  Pentacene precursors for solution-processed OFETs

  摘要：

  15-Acetoxy- and 15-hydroxy-6,13-dihydro-6,13-ethanopentacenes sublimed over 300 degrees C and no pentacene was formed below the temperature. The precursors bearing chlorinated epithiomethano bridges suffered complicated decomposition to give oligomeric pentacene derivatives. The precursor bearing an epithio-oxomethano bridge underwent smooth and clean conversion to pentacene by heat or light. An organic field-effect transistor fabricated by the spin-coating method of the precursor followed by light irradiation at 120 degrees C showed a good FET performance of mu=2.5 x 10(-2) cm(2) V-1 s(-1) and on/off ratio=3.8 x 10(4). (C) 2010 Elsevier Ltd. All rights reserved.

  DOI：

  10.1016/j.tet.2010.06.051

文献信息

• NOVEL COMPOUND AND METHOD OF PRODUCING ORGANIC SEMICONDUCTOR DEVICE
  申请人：Masumoto Akane

  公开号：US20080171403A1

  公开（公告）日：2008-07-17

  A method of producing an organic semiconductor device is provided in which a layer composed of an organic semiconductor having excellent crystallinity and orientation in a low-temperature region can be formed, and the device can be produced in the air. The method includes forming a layer composed of an organic semiconductor precursor on a base body and irradiating the organic semiconductor precursor with light, wherein the organic semiconductor precursor is a porphyrin compound or an azaporphyrin compound having in its molecule at least one of the structure represented by the following general formula (1) or (2):

  提供一种生产有机半导体器件的方法，其中可以在低温区域形成具有优异结晶性和取向性的有机半导体层，并且可以在空气中生产该器件。该方法包括在基体上形成由有机半导体前体组成的层，并用光辐照有机半导体前体，其中有机半导体前体是具有下述一般式（1）或（2）所代表的结构之一的卟啉化合物或氮杂卟啉化合物：
• Compound and method of producing organic semiconductor device
  申请人：Canon Kabushiki Kaisha

  公开号：US07928221B2

  公开（公告）日：2011-04-19

  A method of producing an organic semiconductor device is provided in which a layer composed of an organic semiconductor having excellent crystallinity and orientation in a low-temperature region can be formed, and the device can be produced in the air. The method includes forming a layer composed of an organic semiconductor precursor on a base body and irradiating the organic semiconductor precursor with light, wherein the organic semiconductor precursor is a porphyrin compound or an azaporphyrin compound having in its molecule at least one of the structure represented by the following general formula (1) or (2):

  提供了一种生产有机半导体器件的方法，其中可以在低温区域形成具有优异结晶性和取向性的有机半导体层，并且可以在空气中生产该器件。该方法包括在基体上形成由有机半导体前体组成的层，并用光辐照有机半导体前体，其中有机半导体前体是具有下述一般式（1）或（2）所代表结构中至少一种的卟啉化合物或氮杂卟啉化合物：
• US7928221B2
  申请人：——

  公开号：US7928221B2

  公开（公告）日：2011-04-19
• US8658459B2
  申请人：——

  公开号：US8658459B2

  公开（公告）日：2014-02-25
• Pentacene precursors for solution-processed OFETs
  作者：Hiroki Uoyama、Hiroko Yamada、Tetsuo Okujima、Hidemitsu Uno

  DOI：10.1016/j.tet.2010.06.051

  日期：2010.8

  15-Acetoxy- and 15-hydroxy-6,13-dihydro-6,13-ethanopentacenes sublimed over 300 degrees C and no pentacene was formed below the temperature. The precursors bearing chlorinated epithiomethano bridges suffered complicated decomposition to give oligomeric pentacene derivatives. The precursor bearing an epithio-oxomethano bridge underwent smooth and clean conversion to pentacene by heat or light. An organic field-effect transistor fabricated by the spin-coating method of the precursor followed by light irradiation at 120 degrees C showed a good FET performance of mu=2.5 x 10(-2) cm(2) V-1 s(-1) and on/off ratio=3.8 x 10(4). (C) 2010 Elsevier Ltd. All rights reserved.