Diphenyl(2,4,6-trimethylphenyl)sulfonium perfluoro-1-octanesulfonate | 258341-99-0

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 卤代烷
• 英文名称: Diphenyl(2,4,6-trimethylphenyl)sulfonium perfluoro-1-octanesulfonate
• 英文别名: diphenyl-(2,4,6-trimethylphenyl)sulfanium;1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonate
• CAS: 258341-99-0
• 化学式: C29H21F17O3S2
• 分子量: 804.6
• InChiKey: YMJXZEIVAYQAPQ-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  10.21
• 重原子数：
  51
• 可旋转键数：
  9
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.38
• 拓扑面积：
  66.6
• 氢给体数：
  0
• 氢受体数：
  20

文献信息

• Photoacid generators for use in photoresist compositions
  申请人：ARCH SPECIALTY CHEMICALS, INC.

  公开号：US20020197558A1

  公开（公告）日：2002-12-26

  A photoacid compound having the following general structure: R—O(CF 2 ) n SO 3 X wherein n is an integer between about 1 to 4; R is selected from the group consisting of: substituted or unsubstituted C 1 -C 12 linear or branched alkyl or alkenyl, substituted or unsubstituted araalkyl, substituted or unsubstituted aryl, substituted or unsubstituted bicycloalkyl, substituted or unsubstituted tricycloalkyl, hydrogen, alkyl sulfonic acid, substituted or unsubstituted perfluoroalkyl, the general structure F((CF 2 ) p O) m (CF 2 ) q — wherein p is between about 1 to 4, m is between about 0 to 3 and q is between about 1 to 4, and substituted or unsubstituted partially fluorinated alkyl, halofluoroalkyl, perfluoroalkylsulfonic, or glycidyl; and X is selected from the group consisting of: organic cations and covalently bonded organic radicals.

  具有以下一般结构的光酸化合物：R—O（CF2）nSO3X，其中n是介于1到4之间的整数；R选自以下组合：取代或未取代的C1-C12线性或支链烷基或烯基，取代或未取代的araalkyl，取代或未取代的芳基，取代或未取代的双环烷基，取代或未取代的三环烷基，氢，烷基磺酸，取代或未取代的部分氟化烷基，一般结构F（（CF2）pO）m（CF2）q—其中p介于1到4之间，m介于0到3之间，q介于1到4之间，以及取代或未取代的部分氟化烷基，卤氟烷基，全氟烷基磺酸或环氧丙基；X选自有机阳离子和共价键合有机基团的组合。
• Novel photosensitive bilayer composition
  申请人：Foster Patrick

  公开号：US20050042542A1

  公开（公告）日：2005-02-24

  Polymers and co-polymers having monomeric units formed by the polymerization of monomers of the Structure I where R 1 is a moiety containing an ethylenically unsaturated polymerizable group, R 2 is a C 1 -C 3 alkylene group, and R 3 is a C 1-10 linear or cyclic alkyl group, a C 6-10 aromatic or substituted aromatic group, a C 1-8 alkoxy methyl, or a C 1-8 alkoxy ethyl group, are useful as binder resins for photosensitive compositions, and processes for photolithography in the production of semiconductor devices and materials.

  具有由结构I单体聚合形成的单体单元的高分子和共聚物，其中R1是含有乙烯基不饱和可聚合基团的基团，R2是C1-C3烷基基团，R3是C1-10线性或环烷基团，C6-10芳香或取代芳香基团，C1-8烷氧甲基或C1-8烷氧乙基基团，可用作感光组合物的粘合剂树脂，以及在半导体器件和材料的制造中用于光刻工艺的过程。
• Process for producing triarylsulfonium salt
  申请人：Sumino Motoshige

  公开号：US20070083060A1

  公开（公告）日：2007-04-12

  [Subject] To provide a method for effectively producing a triarylsulfonium salt having a structure that only one aromatic ring of three aromatic rings on the cation portion thereof is different from the other two aromatic rings (hereinafter, abbreviated as a triarylsulfonium salt relating to the present invention) in a high yield without forming any byproduct. [Means for Solution Problems] The present invention relates to a method for producing a triarylsulfonium salt represented by the general formula [4]: wherein, two R 1 's represent each hydrogen atom, halogen atom, alkyl group, lower haloalkyl group, alkoxy group, acyl group, hydroxyl group, amino group, nitro group or cyano group; R represents an aryl group which may have a substituent selected from a halogen atom, an alkyl group, a lower haloalkyl group, an alkoxy group, an alkylthio group, a N-alkylcarbamoyl group and a carbamoyl group, and the above substituent is different from one represented by the above R 1 ; and A 1 represents a strong acid residue, comprising reacting a diaryl sulfoxide represented by the general formula [1]: wherein, R 1 represents the same as above, and an aryl Grignard reagent represented by the general formula [2]: RMgX   [2] wherein, X represents a halogen atom; R represents the same as above, in the presence of an activator with high affinity for oxygen of 3 to 7.5 equivalents relative to the above diaryl sulfoxide, and then reacting the resultant reaction mixture with a strong acid represented by the general formula [3]: HA 1 [3] wherein, A 1 represents the same as above, or a salt thereof.

  [主题] 提供一种有效地生产三芳基硫鎓盐的方法，其结构中阳离子部分的三个芳环中仅有一个芳环与另外两个芳环不同（以下简称与本发明有关的三芳基硫鎓盐），高产率地生产三芳基硫鎓盐而不产生任何副产物。 [解决问题的方法] 本发明涉及一种生产由一般式[4]表示的三芳基硫鎓盐的方法： 其中，两个R1分别代表氢原子、卤素原子、烷基、较低的卤代烷基、烷氧基、酰基、羟基、氨基、硝基或氰基；R代表芳基，该芳基可以具有从卤素原子、烷基、较低的卤代烷基、烷氧基、烷硫基、N-烷基氨甲酰基和氨甲酰基中选择的取代基，上述取代基与上述R1所代表的取代基不同；A1代表强酸残基。 该方法包括在高亲氧活化剂存在下，使一由一般式[1]表示的二芳基亚砜： 其中，R1代表与上述相同，以及由一般式[2]表示的芳基格氏试剂反应： RMgX   [2] 其中，X代表卤素原子；R代表与上述相同，然后将所得反应混合物与一由一般式[3]表示的强酸： HA1[3] 其中，A1代表与上述相同或其盐反应。
• Positive resist composition
  申请人：Fuji Photo Film Co., Ltd.

  公开号：EP1457822A2

  公开（公告）日：2004-09-15

  A positive resist composition comprising (A) a resin having a specific structure and capable of decomposing under action of an acid to increase solubility in an alkali developer, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

  一种阳离子抗蚀剂组合物，包括：(A) 具有特定结构并能在酸作用下分解以增加在碱显影液中溶解度的树脂；(B) 能在辐照射线或辐射照射下生成酸的化合物。
• Positive resist laminate
  申请人：FUJI PHOTO FILM CO., LTD.

  公开号：US20020028409A1

  公开（公告）日：2002-03-07

  A positive resist laminate which comprises a substrate, a first resist layer and a second resist layer, wherein the first resist layer is to be a heat-hardening layer and comprises (a-1) a polymer containing an alicyclic skeleton in the side chain thereof, and the second resist layer comprises: (b) a polymer which contains a silicon atom in the side chain thereof and which is insoluble in water and becomes soluble in an aqueous alkali solution by the action of an acid; and (c) a compound which generates an acid upon irradiation with an actinic ray or radiation.

  一种正极抗蚀层压板，包括基板、第一抗蚀层和第二抗蚀层、 其中，第一抗蚀层为热硬化层，包括 (a-1) 侧链中含有脂环族骨架的聚合物，以及 第二抗蚀层包括：(b) 侧链中含有硅原子的聚合物，该聚合物不溶于水，但在酸的作用下可溶于碱水溶液；以及 (c) 在辐照射线或辐射照射下产生酸的化合物。