硫代二-1,4-亚苯基二(6-重氮基-5,6-二氢-5-氧代萘-1-磺酸酯) | 68901-24-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 中文名称: 硫代二-1,4-亚苯基二(6-重氮基-5,6-二氢-5-氧代萘-1-磺酸酯)
• 英文名称: 1-Naphthalenesulfonic acid, 6-diazo-5,6-dihydro-5-oxo-, thiodi-4,1-phenylene ester
• 英文别名: 2-diazonio-5-[4-[4-(6-diazonio-5-oxidonaphthalen-1-yl)sulfonyloxyphenyl]sulfanylphenoxy]sulfonylnaphthalen-1-olate
• CAS: 68901-24-6
• 化学式: C32H18N4O8S3
• 分子量: 682.7
• InChiKey: DZDIWDGDFAMSTD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  10.6
• 重原子数：
  47
• 可旋转键数：
  8
• 环数：
  6.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  231
• 氢给体数：
  0
• 氢受体数：
  11

文献信息

• Semiconductor devices, semiconductor packages and methods of forming the same
  申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

  公开号：US10665545B2

  公开（公告）日：2020-05-26

  Semiconductor devices, semiconductor packages and methods of forming the same are provided. One of the semiconductor device includes a dielectric layer and a connector. The dielectric layer includes a dielectric material and an additive, wherein the additive includes a compound represented by Chemical Formula 1. The connector is disposed in the dielectric layer.

  本文提供了半导体器件、半导体封装及其形成方法。其中一种半导体器件包括介电层和连接器。介电层包括介电材料和添加剂，其中添加剂包括由化学式 1 表示的化合物。连接器设置在介电层中。
• Semiconductor devices and methods of forming the same
  申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

  公开号：US11049812B2

  公开（公告）日：2021-06-29

  A semiconductor device includes a dielectric layer and a conductive structure in the dielectric layer. The dielectric layer includes a dielectric material and a compound represented by Chemical Formula 1. In Chemical Formula 1, R is the same as defined in the specification.

  一种半导体器件包括介电层和介电层中的导电结构。介电层包括一种介电材料和一种由化学式 1 表示的化合物。在化学式 1 中，R 与说明书中的定义相同。
• SEMICONDCUTOR DEVICES, SEMICONDCUTOR PACKAGES AND METHODS OF FORMING THE SAME
  申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

  公开号：US20200091073A1

  公开（公告）日：2020-03-19

  Semiconductor devices, semiconductor packages and methods of forming the same are provided. One of the semiconductor device includes a dielectric layer and a connector. The dielectric layer includes a dielectric material and an additive, wherein the additive includes a compound represented by Chemical Formula 1. The connector is disposed in the dielectric layer.
• SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME
  申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

  公开号：US20200286832A1

  公开（公告）日：2020-09-10

  A semiconductor device includes a dielectric layer and a conductive structure in the dielectric layer. The dielectric layer includes a dielectric material and a compound represented by Chemical Formula 1.