6-tert-Butyl-naphthalin-1,4-dicarbonsaeure | 60070-01-1

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 6-tert-Butyl-naphthalin-1,4-dicarbonsaeure
• 英文别名: 6-tert-butyl-naphthalene-1,4-dicarboxylic acid；6-Tert-butylnaphthalene-1,4-dicarboxylic acid
• CAS: 60070-01-1
• 化学式: C₁₆H₁₆O₄
• 分子量: 272.301
• InChiKey: PVAITALUZDBSLE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.9
• 重原子数：
  20
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.25
• 拓扑面积：
  74.6
• 氢给体数：
  2
• 氢受体数：
  4

文献信息

• INSULATING FILM, METHOD FOR FORMING SAME AND COMPOSITION FOR FORMING FILM
  申请人：JSR Corporation

  公开号：EP1696478A1

  公开（公告）日：2006-08-30

  The invention provides a method of forming an insulating film which exhibits resistance against processing such as RIE used when forming a dual-damascene structure while maintaining a low relative dielectric constant of a polysiloxane insulating film. A polysiloxane insulating film is formed on a substrate by hydrolysis and condensation of a silane compound. A solution obtained by dissolving a polycarbosilane compound shown by the following general formula in a solvent is applied to the polysiloxane insulating film, and the resulting coating is heated to form a polycarbosilane insulating film. An organic insulating film is then formed on the polycarbosilane insulating film.

  本发明提供了一种形成绝缘膜的方法，这种绝缘膜既能抵抗在形成双大马士革结构时使用的 RIE 等加工，又能保持聚硅氧烷绝缘膜较低的相对介电常数。聚硅氧烷绝缘膜是通过硅烷化合物的水解和缩合作用在基材上形成的。将下表通式所示的聚碳硅烷化合物溶解在溶剂中得到的溶液涂抹在聚硅氧烷绝缘膜上，然后加热涂层，形成聚碳硅烷绝缘膜。 然后在聚碳硅烷绝缘膜上形成有机绝缘膜。
• Insulating film and method of forming the same
  申请人：Shiota Atsushi

  公开号：US20060210812A1

  公开（公告）日：2006-09-21

  A method of forming an insulating film includes: forming a polysiloxane insulating film on a substrate; forming a polycarbosilane insulating film on the polysiloxane insulating film; and forming an organic insulating film on the polycarbosilane insulating film. The polysiloxane insulating film is formed by hydrolysis and condensation of a silane compound, and the polycarbosilane insulating film is formed by applying a solution, obtained by dissolving a polycarbosilane compound in a solvent, to the polysiloxane insulating film, and heating the resulting coating,

  一种形成绝缘膜的方法包括：在基材上形成聚硅氧烷绝缘膜；在聚硅氧烷绝缘膜上形成聚碳硅烷绝缘膜；以及在聚碳硅烷绝缘膜上形成有机绝缘膜。聚硅氧烷绝缘膜是通过硅烷化合物的水解和缩合形成的，而聚碳硅烷绝缘膜则是通过将聚碳硅烷化合物溶解在溶剂中得到的溶液涂覆在聚硅氧烷绝缘膜上，并加热所形成的涂层而形成的、
• US4245007A
  申请人：——

  公开号：US4245007A

  公开（公告）日：1981-01-13