Iodonium, bis[(1,1-dimethylethyl)phenyl]-, salt with perfluorohexanesulfonic acid (1:1) | 866621-50-3

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 卤代烷
• 英文名称: Iodonium, bis[(1,1-dimethylethyl)phenyl]-, salt with perfluorohexanesulfonic acid (1:1)
• 英文别名: bis(2-tert-butylphenyl)iodanium;1,1,2,2,3,3,4,4,5,5,6,6,6-tridecafluorohexane-1-sulfonate
• CAS: 866621-50-3
• 化学式: C26H26F13IO3S
• 分子量: 792.4
• InChiKey: JGBDZZPDMXIDQM-UHFFFAOYSA-M

计算性质

• 辛醇/水分配系数(LogP)：
  5.64
• 重原子数：
  44
• 可旋转键数：
  8
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.54
• 拓扑面积：
  65.6
• 氢给体数：
  0
• 氢受体数：
  16

文献信息

• Negative resist composition with fluorosulfonamide-containing polymer
  申请人：Li Wenjie

  公开号：US20050058930A1

  公开（公告）日：2005-03-17

  A negative resist composition is disclosed, wherein the resist composition includes a polymer having at least one fluorosulfonamide monomer unit having one of the following two formulae: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, —O—C(O)—C(O)—O—, or alkyl; P is 0 or 1; R 1 is a linear or branched alkyl group of 1 to 20 carbons; R 2 is hydrogen, fluorine, a linear or branched alkyl group of 1 to 6 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 6 carbons; and n is an integer from 1 to 6. A method of forming a patterned material layer on a substrate is also disclosed, wherein the method includes applying the fluorosulfonamide-containing resist composition to the substrate to form a resist layer on the material layer; patternwise exposing the resist layer to imaging radiation; removing portions of the resist layer not exposed to the imaging radiation to create spaces in the resist layer corresponding to the pattern; and removing portions of the material layer at the spaces formed in the resist layer, thereby forming a patterned material layer.

  本发明公开了一种负型光刻胶组合物，其中所述光刻胶组合物包括具有至少一个氟磺酰胺单体单元的聚合物，其具有以下两种式之一: 其中：M是可聚合的骨架基团；Z是选择自—C（O）O—、—C（O）—、—OC（O）—、—O—C（O）—C（O）—O—或烷基的连接基团；P为0或1；R1是1至20个碳的线性或支链烷基；R2是氢、氟、1至6个碳的线性或支链烷基，或1至6个碳的半氟或全氟线性或支链烷基；n是1至6的整数。本发明还公开了一种在基板上形成图案材料层的方法，其中该方法包括将含有氟磺酰胺的光刻胶组合物应用于基板上，以在材料层上形成光刻胶层；将光刻胶层按图案暴露于成像辐射；去除未暴露于成像辐射的光刻胶层部分，以在光刻胶层中形成与图案相对应的空间；并去除在光刻胶层中形成的空间处的材料层部分，从而形成图案化的材料层。
• DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITION AND PATTERN FORMING METHOD USING THEREOF
  申请人：International Business Machines Corporation

  公开号：US20150050601A1

  公开（公告）日：2015-02-19

  The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

  本发明涉及一种可开发的底部抗反射涂层（BARC）组合物及使用该BARC组合物的图案形成方法。该BARC组合物包括第一聚合物，其具有第一羧基酸基团，含羟基的脂环族基团和第一色团基团；第二聚合物，其具有第二羧基酸基团，含羟基的非环族基团和第二色团基团；交联剂；以及辐射敏感的酸发生剂。第一和第二色团基团吸收100纳米至400纳米波长的光线。在图案形成方法中，先形成一层BARC组合物的BARC层，再在其上形成一层光阻层。经曝光后，通过显影剂选择性地去除光阻层和BARC层的未曝光区域，形成光阻层中的图案结构。该BARC组合物和图案形成方法特别适用于植入级别。
• Fluorinated photoresist materials with improved etch resistant properties
  申请人：Khojasteh Mahmoud

  公开号：US20060105269A1

  公开（公告）日：2006-05-18

  A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R 1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R 2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R 3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R 4 represents hydrogen (H), methyl (CH 3 ), trifluoromethyl (CF 3 ), difluoromethyl (CHF 2 ), fluoromethyl (CH 2 F), or a semi- or perflourinated aliphatic group; R 5 represents trifluoromethyl (CF 3 ), difluoromethyl (CHF 2 ), fluoromethyl (CH 2 F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR 12 represents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.

  本发明公开了一种包括聚合物的光刻胶组合物，其中聚合物包括至少一种具有以下式子的单体： 式中 R 1 代表氢（H），1-20 个碳原子的直链、支链或环烷基，1-20 个碳原子的半氟或全氟直链、支链或环烷基或 CN； R 2 2 代表 5 个或更多碳原子的脂环族基团； X 代表亚甲基、醚、酯、酰胺或碳酸酯链节； R 3 代表具有 1 个或多个碳原子的直链或支链亚烷基或半氟或全氟直链或支链亚烷基； R 4 代表氢（H）、甲基（CH 3 ）、三氟甲基（CF 3 ）、二氟甲基（CHF 2 ）、氟甲基（CH 2 F）或半氟化或全氟化脂肪族基团； R 5 代表三氟甲基 (CF 3 ）、二氟甲基（CHF 2 ）、氟甲基（CH 2 F），或半氟或全氟取代或未取代的脂肪族基团； n 代表 1 个或多个整数；以及 OR 12 代表 OH 或至少一个选自碳酸叔烷基酯、叔烷基酯、叔烷基醚、缩醛和缩酮的酸性基团。本发明还公开了一种将基底图案化的方法，其中该方法包括：将上述光致抗蚀剂组合物涂在基底上以形成胶片；将胶片图案化地暴露于成像辐射源；以及显影胶片的区域以形成图案化的基底。
• NEGATIVE RESIST COMPOSITION WITH FLUOROSULFONAMIDE-CONTAINING POLYMER
  申请人：International Business Machines Corporation

  公开号：EP1664923A1

  公开（公告）日：2006-06-07
• EP1664923A4
  申请人：——

  公开号：EP1664923A4

  公开（公告）日：2008-08-27