[EN] PATTERNING A CONDUCTIVE DEPOSITED LAYER USING A NUCLEATION INHIBITING COATING AND AN UNDERLYING METALLIC COATING<br/>[FR] FORMATION DE MOTIFS SUR UNE COUCHE CONDUCTRICE DÉPOSÉE À L'AIDE DE REVÊTEMENT INHIBITEUR DE NUCLÉATION ET REVÊTEMENT MÉTALLIQUE SOUS-JACENT
申请人:[en]OTI LUMIONICS INC.
公开号:WO2022123431A1
公开(公告)日:2022-06-16
A semiconductor device having a plurality of layers deposited on a substrate and extending in a first portion and a second portion of at least one lateral aspect defined by a lateral axis thereof, comprises an orientation layer comprising an orientation material, disposed on a first exposed layer surface of the device in at least the first portion; at least one patterning layer comprising a patterning material, disposed on a first exposed layer surface of the orientation layer; and at least one deposited layer comprising a deposited material, disposed on a second exposed layer surface of the device in the second portion; wherein the first portion is substantially devoid of a closed coating of the deposited material.