tri(ethyl-d5)silylacetylene | 1312340-87-6

• 分子结构分类: 有机化合物 - 乙炔化物
• 英文名称: tri(ethyl-d5)silylacetylene
• CAS: 1312340-87-6
• 化学式: C₈H₁₆Si
• 分子量: 155.181
• InChiKey: FWSPXZXVNVQHIF-RHZDEKLSSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.67
• 重原子数：
  9.0
• 可旋转键数：
  6.0
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.75
• 拓扑面积：
  0.0
• 氢给体数：
  0.0
• 氢受体数：
  0.0

反应信息

• 作为反应物：
  描述：

  tri(ethyl-d5)silylacetylene 、 蒽噻吩-5,11-二酮,正反异构体的混合物 在 正丁基锂 作用下， 以 正己烷 、 四氢呋喃 为溶剂， 反应 1.0h， 生成
  参考文献：
  名称：

  Zone-Refinement Effect in Small Molecule−Polymer Blend Semiconductors for Organic Thin-Film Transistors

  摘要：

  The blend films of small-molecule semiconductors with insulating polymers exhibit not only excellent solution processability but also superior performance characteristics in organic thin-film transistors (OTFTs) over those of neat small-molecule semiconductors. To understand the underlying mechanism, we studied triethylsilylethynyl anthradithiophene (TESADT) with small amounts of impurity formed by weak UV exposure. OTFTs with neat impure TESADT had drastically reduced field-effect mobility (<10(-5) CM2/(V/s)), and a disappearance of the high-temperature crystal phase was observed for neat impure TESADT. However, the mobility of the blend films of the UV-exposed TESADT with poly(alpha-methylstyrene) (P alpha MS) is recovered to that of a fresh TESADT-P alpha MS blend (0.040 cm(2)/(V/s)), and the phase transition characteristics partly return to those of fresh TESADT films. These results are corroborated by OTFT results on "aged" TIPS-pentacene. These observations, coupled with the results of neutron reflectivity study, indicate that the formation of a vertically phase-separated layer of crystalline small-molecule semiconductors allows the impurity species to remain preferentially in the adjacent polymer-rich layer. Such a "zone-refinement effect" in blend semiconductors effectively removes the impurity species that are detrimental to organic electronic devices from the critical charge-transporting interface region.

  DOI：

  10.1021/ja108772q
• 作为产物：
  描述：

  、 乙炔基溴化镁 以 四氢呋喃 为溶剂， 以530 mg的产率得到tri(ethyl-d5)silylacetylene
  参考文献：
  名称：

  Zone-Refinement Effect in Small Molecule−Polymer Blend Semiconductors for Organic Thin-Film Transistors

  摘要：

  The blend films of small-molecule semiconductors with insulating polymers exhibit not only excellent solution processability but also superior performance characteristics in organic thin-film transistors (OTFTs) over those of neat small-molecule semiconductors. To understand the underlying mechanism, we studied triethylsilylethynyl anthradithiophene (TESADT) with small amounts of impurity formed by weak UV exposure. OTFTs with neat impure TESADT had drastically reduced field-effect mobility (<10(-5) CM2/(V/s)), and a disappearance of the high-temperature crystal phase was observed for neat impure TESADT. However, the mobility of the blend films of the UV-exposed TESADT with poly(alpha-methylstyrene) (P alpha MS) is recovered to that of a fresh TESADT-P alpha MS blend (0.040 cm(2)/(V/s)), and the phase transition characteristics partly return to those of fresh TESADT films. These results are corroborated by OTFT results on "aged" TIPS-pentacene. These observations, coupled with the results of neutron reflectivity study, indicate that the formation of a vertically phase-separated layer of crystalline small-molecule semiconductors allows the impurity species to remain preferentially in the adjacent polymer-rich layer. Such a "zone-refinement effect" in blend semiconductors effectively removes the impurity species that are detrimental to organic electronic devices from the critical charge-transporting interface region.

  DOI：

  10.1021/ja108772q