Triethylammonium perfluorooctanesulfonate | 54439-46-2

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 卤代烷
• 英文名称: Triethylammonium perfluorooctanesulfonate
• 英文别名: 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonate;triethylazanium
• CAS: 54439-46-2
• 化学式: C14H16F17NO3S
• 分子量: 601.32
• InChiKey: QCCJRRYXJSOBIM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.43
• 重原子数：
  36
• 可旋转键数：
  9
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  70
• 氢给体数：
  1
• 氢受体数：
  20

文献信息

• COMPOSITION FOR FILM FORMATION, FILM, RESIST UNDERLAYER FILM-FORMING METHOD, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND
  申请人：JSR CORPORATION

  公开号：US20190094695A1

  公开（公告）日：2019-03-28

  The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R 1 to R 4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R 1 to R 4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R 1 to R 4 bond. Ar 1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R 5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.

  影片形成的组合物包括一个化合物，其中包括一个公式（1）的基团和一个溶剂。在公式（1）中，R1至R4分别代表氢原子，具有1至20个碳原子的一价有机基团，或者R1至R4一起代表具有3至20个环原子的环结构，该环结构与碳原子或R1至R4键合的碳链一起。Ar1代表通过从具有6至20个碳原子的芳香环中去除（n+3）个氢原子而获得的基团。n为0至9之间的整数。R5代表一个羟基，一个卤素原子，一个硝基，或者具有1至20个碳原子的一价有机基团。
• Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound
  申请人：JSR CORPORATION

  公开号：US11003079B2

  公开（公告）日：2021-05-11

  The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), R1 to R4 each independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or R1 to R4 taken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which R1 to R4 bond. Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. R5 represents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms.

  用于成膜的组合物包括一种包括式（1）基团的化合物和一种溶剂。在式 (1) 中，R1 至 R4 各自独立地代表氢原子、具有 1 至 20 个碳原子的一价有机基团，或 R1 至 R4 合在一起代表具有 3 至 20 个环原子的环状结构以及 R1 至 R4 所键合的碳原子或碳链。Ar1 代表通过从具有 6 至 20 个碳原子的芳香环中移除 (n+3) 个氢原子而得到的基团，n 为 0 至 9 的整数。R5 代表羟基、卤素原子、硝基或具有 1 至 20 个碳原子的一价有机基团。
• Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound
  申请人：JSR CORPORATION

  公开号：US11126084B2

  公开（公告）日：2021-09-21

  A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.

  一种用于形成抗蚀剂底层膜的组合物含有一种具有式（1）所代表基团的化合物和一种溶剂。R1 代表具有 2 至 10 个碳原子且化合价为（m+n）的有机基团，其中碳原子包括两个相邻的碳原子，羟基或烷氧基与这两个碳原子中的一个键合，氢原子与这两个碳原子中的另一个键合；L1 代表乙炔二基或取代或未取代的乙烯二基； R2 代表氢原子或具有 1 至 20 个碳原子的一价有机基团； n 是 1 至 3 的整数； * 表示与化合物中除式 (1) 所代表的基团以外的其他分子的键合位点；以及 m 是 1 至 3 的整数。
• COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, RESIST UNDERLAYER FILM AND FORMING METHOD THEREOF, PRODUCTION METHOD OF PATTERNED SUBSTRATE, AND COMPOUND
  申请人：JSR CORPORATION

  公开号：US20190243247A1

  公开（公告）日：2019-08-08

  A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. R 1 represents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; L 1 represents an ethynediyl group or a substituted or unsubstituted ethenediyl group; R 2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3.
• SEMICONDUCTOR SUBSTRATE TREATMENT AGENT AND SUBSTRATE-TREATING METHOD
  申请人：JSR CORPORATION

  公开号：US20190264035A1

  公开（公告）日：2019-08-29

  A substrate-treating method includes applying a treatment agent directly or indirectly on one face of a substrate to form a substrate pattern collapse-inhibitory film. The substrate includes a pattern on the one face. The substrate pattern collapse-inhibitory film is removed by dry etching after forming the substrate pattern collapse-inhibitory film. The treatment agent includes a compound including an aromatic ring, and a hetero atom-containing group that bonds to the aromatic ring; and a solvent.