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12H-dibenzo[b,h]fluorene-12-thione | 942226-23-5

中文名称
——
中文别名
——
英文名称
12H-dibenzo[b,h]fluorene-12-thione
英文别名
Pentacyclo[11.8.0.02,11.04,9.015,20]henicosa-1(21),2,4,6,8,10,13,15,17,19-decaene-12-thione
12H-dibenzo[b,h]fluorene-12-thione化学式
CAS
942226-23-5
化学式
C21H12S
mdl
——
分子量
296.392
InChiKey
NLBHWWFJACFZSJ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    6.2
  • 重原子数:
    22
  • 可旋转键数:
    0
  • 环数:
    5.0
  • sp3杂化的碳原子比例:
    0.0
  • 拓扑面积:
    32.1
  • 氢给体数:
    0
  • 氢受体数:
    1

反应信息

  • 作为反应物:
    描述:
    12H-dibenzo[b,h]fluorene-12-thione 作用下, 以 甲苯 为溶剂, 反应 4.0h, 以60%的产率得到12,12'-bidibenzo[b,h]fluorenylidene
    参考文献:
    名称:
    应变和Hückel芳香性:有机电子中有希望的新一代电子受体的驱动力
    摘要:
    牵引力:具有9,9'-联芴基骨架的电子接受材料的主要特征是应力消除和芳香性的提高。这些二聚体(参见图片)在红色光谱区域(约600 nm)和HOMO(5.58–5.06 eV)和LUMO(3.37–3.09 eV)的能级附近表现出吸收,这与高溶解度和热稳定性一起使这些材料块状异质结(BHJ)太阳能电池的有吸引力的受体。
    DOI:
    10.1002/anie.200905117
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文献信息

  • “Deconvoluted Fullerene” Derivatives: Synthesis and Characterization
    作者:Fulvio G. Brunetti、Alessandro Varotto、Nicolas A. Batara、Fred Wudl
    DOI:10.1002/chem.201100442
    日期:2011.7.25
    We have designed the synthesis of “deconvoluted fullerenederivatives that present an ordered pattern of hexagons and pentagons in the backbone of the molecule. We not only mimicked the fullerene structure in dihedral planes, but also preserved its electron accepting behavior and enlarged its optical absorption. Moreover, very preliminary photoluminescence (PL) quenching experiments also confirmed
    我们设计了“去卷积富勒烯”衍生物的合成方法,该衍生物在分子主链中呈现六边形和五边形的有序图案。我们不仅在二面平面上模拟了富勒烯结构,而且保留了其电子接受行为并扩大了其光吸收。此外,非常初步的光致发光(PL)猝灭实验也证实了这些材料在有机光伏(OPV)领域中作为受体的潜力。还介绍了基于AFM分析的表面形态的简短讨论。
  • PHENOL MONOMER, POLYMER FOR FORMING A RESIST UNDERLAYER FILM INCLUDING SAME, AND COMPOSITION FOR A RESIST UNDERLAYER FILM INCLUDING SAME
    申请人:DONGJIN SEMICHEM CO., LTD
    公开号:US20140319097A1
    公开(公告)日:2014-10-30
    A phenolic monomer used in the lithographic process for semiconductor fabrication, a polymer for preparing a resist under-layer comprising the same, and a resist under-layer composition comprising the same, are disclosed. The phenolic monomer is represented by the formula 1 of the specification, in Formula 1, R1, R2, R3, and R4 are independently a hydrogen atom, or a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; A is a monocyclic or polycyclic aromatic hydrocarbon group having 4 to 20 carbon atoms; X is an oxygen atom (O) or a sulfur atom (S); and Y is a single bond, a methylene group (—CH2-), an oxygen atom (O), a sulfur atom (S), an amino group (—NH—), or two isolated hydrogen atoms, wherein A, R1, R2, R3, and R4 can be substituted with a straight-chain, branched, monocyclic or polycyclic saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms with or without a hetero atom; and either R1 and R2 or R3 and R4 are independently linked to each other to form a ring.
  • US9170495B2
    申请人:——
    公开号:US9170495B2
    公开(公告)日:2015-10-27
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