The present disclosure relates to a diamine compound or its salt having utility for preparing an organometallic compound suitable for vapor phase deposition processes such as a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method.
本公开涉及一种二胺化合物或其盐,其用于制备适用于气相沉积工艺的有机
金属化合物,如
化学气相沉积(CVD)方法或原子层沉积(ALD)方法。