申请人:NISSAN CHEMICAL CORPORATION
公开号:US11319514B2
公开(公告)日:2022-05-03
A simplified method for removing foreign matters formed on a substrate in a semiconductor device manufacturing process; and a composition for forming a coating film for foreign matter removal use, which can be used in the method. A coating film is formed on a semiconductor substrate using a composition preferably containing a polyamic acid produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound having at least one carboxyl group or a polyamic acid produced from (a) a tetracarboxylic dianhydride compound, (b) a diamine compound having at least one carboxyl group and (c) a diamine compound, and then foreign matters occurring on the coating film are removed together with the coating film by the treatment with a developing solution.
一种用于清除半导体器件制造过程中在基片上形成的异物的简化方法;以及一种用于形成用于清除异物的涂膜的组合物,该组合物可用于该方法。使用一种组合物在半导体衬底上形成涂膜,该组合物最好含有由(a)四羧酸二酐化合物和(b)具有至少一个羧基的二胺化合物生成的聚酰胺酸,或由(a)四羧酸二酐化合物、(b)具有至少一个羧基的二胺化合物和(c)二胺化合物生成的聚酰胺酸,然后通过显影液的处理将涂膜上的异物连同涂膜一起去除。