3-methyl-5-methoxymethy-perhydro-1,3,5-oxadiazin-4-one | 21115-47-9

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机碳酸及其衍生物
• 英文名称: 3-methyl-5-methoxymethy-perhydro-1,3,5-oxadiazin-4-one
• 英文别名: 3-methoxymethyl-5-methyl-tetrahydro-[1,3,5]oxadiazin-4-one；3-Methoxymethyl-5-methyl-tetrahydro-[1,3,5]oxadiazin-4-on；3-(Methoxymethyl)-5-methyl-1,3,5-oxadiazinan-4-one
• CAS: 21115-47-9
• 化学式: C₆H₁₂N₂O₃
• 分子量: 160.173
• InChiKey: MOSWOCYONRPTOY-UHFFFAOYSA-N

物化性质

• 沸点：
  89-90 °C(Press: 0.2 Torr)
• 密度：
  1.143±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  -0.5
• 重原子数：
  11
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.83
• 拓扑面积：
  42
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  3-methyl-5-methoxymethy-perhydro-1,3,5-oxadiazin-4-one 、 乙硫醇 生成 3-(ethylmercapto-methyl)-5-methyl-tetrahydro-[1,3,5]oxadiazin-4-one
  参考文献：
  名称：

  Kadowaki, Bulletin of the Chemical Society of Japan, 1936, vol. 11, p. 253,256

  摘要：

  DOI：
• 作为产物：
  描述：

  聚合甲醛 、 N-甲基脲 在 barium dihydroxide 作用下， 生成 3-methyl-5-methoxymethy-perhydro-1,3,5-oxadiazin-4-one
  参考文献：
  名称：

  Kadowaki, Bulletin of the Chemical Society of Japan, 1936, vol. 11, p. 253,256

  摘要：

  DOI：

文献信息

• The Formation Pathway of 3,5-Bis(methoxymethyl)perhydro-1,3,5-oxadiazin-4-one
  作者：Ryuichi Shiba、Miyuki Takahashi、Toichi Ebisuno、Michiaki Takimoto

  DOI：10.1246/bcsj.62.1930

  日期：1989.6

  The investigation of the reactions of urea and its methyl derivatives with formaldehyde elucidated the formation pathway of 3,5-bis(methoxymethyl)perhydro-1,3,5-oxadiazin-4-one. 1) The addition of formaldehyde to urea became increasingly difficult according to the increase of the number of added formaldehyde molecules, probably because of the steric hindrance of the hydroxymethyl groups. 2) 3,5-Bis(methoxymethyl)perhydro-1,3,5-oxadiazin-4-one was concluded to be derived from urea via tris(hydroxymethyl)urea and 3-(hydroxymethyl)perhydro-1,3,5-oxadiazin-4-one but not via tetrakis(hydroxymethyl)urea or perhydro-1,3,5-oxadiazin-4-one.

  对尿素及其甲基衍生物与甲醛的反应的研究阐明了3,5-双(甲氧基甲基)全氢-1,3,5-氧二嗪-4-酮的形成途径。1) 随着甲醛分子数量的增加，尿素与甲醛的加成反应变得越来越困难，这可能是由于羟甲基的立体位阻造成的。2) 3,5-双(甲氧基甲基)全氢-1,3,5-氧二嗪-4-酮被认为是通过三(羟甲基)脲和3-(羟甲基)全氢-1,3,5-氧二嗪-4-酮从尿素中衍生出来的，而不是通过四(羟甲基)脲或全氢-1,3,5-氧二嗪-4-酮。
• PATTERNABLE LOW-K DIELECTRIC INTERCONNECT STRUCTURE WITH A GRADED CAP LAYER AND METHOD OF FABRICATION
  申请人：Lin Qinghuang

  公开号：US20110074044A1

  公开（公告）日：2011-03-31

  An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating.
• PLANARIZATION OVER TOPOGRAPHY WITH MOLECULAR GLASS MATERIALS
  申请人：Allen Robert D.

  公开号：US20110079579A1

  公开（公告）日：2011-04-07

  Molecular glass based planarizing compositions for lithographic processing are disclosed. The processes generally include casting the planarizing composition onto a surface comprised of lithographic features, the planarizing composition comprising at least one molecular glass and at least one solvent; and heating the planarizing composition to a temperature greater than a glass transition temperature of the at least one molecular glass. Exemplary molecular glasses include polyhedral oligomeric silsesquioxane derivatives, calixarenes, cyclodextrin derivatives, and other non-polymeric large molecules.
• STRUCTURES AND METHODS FOR PHOTO-PATTERNABLE LOW-k (PPLK) INTEGRATION
  申请人：Darnon Maxime

  公开号：US20110115094A1

  公开（公告）日：2011-05-19

  A single damascene or dual damascene interconnect structure fabricated with a photo-patternable low-k dielectric (PPLK) which is cured after etching. This interconnect method prevents the PPLK damage and the tapering of the edges of the interconnect structure. In one embodiment, the method of the present invention includes depositing a photo-patternable low-k (PPLK) material atop an initial structure. The initial structure can include a dielectric cap, an antireflective coating (ARC), or a material stack including the same. The at least one PPLK material is patterned, creating a single damascene structure. For dual damascene structures, a second PPLK layer is coated and patterned. An etch process is performed to transfer the pattern for the PPLK material into at least a portion of the substrate, typically into the dielectric cap and/or ARC using processes known by those skilled in the art (typically fluorocarbon-based plasmas). A diffusion liner deposition can follow the etch process. An electrically conductive material can also be deposited. The diffusion liner and the electrically conductive material can be polished using chemical mechanical polishing. The resulting structure is cured anytime after etching order to transform the resist like PPLK into a permanent low-k material that remains within the structure.
• METHODS FOR FABRICATION OF AN AIR GAP-CONTAINING INTERCONNECT STRUCTURE
  申请人：Clevenger Lawrence A.

  公开号：US20110221062A1

  公开（公告）日：2011-09-15

  Methods for producing air gap-containing metal-insulator interconnect structures for VLSI and ULSI devices using a photo-patternable low k material as well as the air gap-containing interconnect structure that is formed are disclosed. More particularly, the methods described herein provide interconnect structures built in a photo-patternable low k material in which air gaps are defined by photolithography in the photo-patternable low k material. In the methods of the present invention, no etch step is required to form the air gaps. Since no etch step is required in forming the air gaps within the photo-patternable low k material, the methods disclosed in this invention provide highly reliable interconnect structures.