作者:A.P. Irsa、L. Friedman
DOI:10.1016/0022-1902(58)80051-2
日期:1958.4
made on BrF3. The gas samples were subjected to rate of effusion studies in the mass spectrometer sample system and shown to contain diatomic halogen and halogen fluoride impurities. Halogen oxyfluorides were detected in BrF5, BrF3 and ClF3 samples and reaction between O2 and BrF5 was observed on mixing. Upper limits for ionization potentials were obtained for IF5, IF, ICl, IBr, BrF3, BrF, BrCL, ClF3
测定了IF 5,BrF 5,BrF 3和ClF 3的外观电位和正离子质谱。对BrF 3进行了负离子研究。在质谱仪样品系统中对气体样品进行了渗出率研究,结果表明其中含有双原子卤素和氟化卤素杂质。在BrF 5,BrF 3和ClF 3样品中检测到卤氧化氟,混合后观察到O 2和BrF 5之间的反应。获得了IF 5,IF,ICl,IBr,BrF 3,BrF,BrCL,ClF的电离势上限3和ClF直接来自出现电位。使用补充的热化学数据推导出自由基BrF 2和ClF 2的电离势。除BrCl以外,双原子卤素间离子的电离能使卤素间分子离子的键解离能近似等于中性分子的相应值。