The present disclosure is directed at methods of forming an N—Si silyl bond, the method comprising contacting an organic substrate comprising an aromatic amine having at least one N—H bond with a mixture comprising of (a) at least one hydrosilane or hydrosiloxane and (b) at least one hydroxide or alkoxide, under conditions sufficient to form the N—Si bond. The disclosure is further directed to the compositions involved in these methods and the products that result therefrom.
本公开涉及形成N-Si
硅基键的方法,所述方法包括将含有至少一个N-H键的芳香胺的有机基质与包括(a)至少一种氢
硅烷或氢
硅氧烷以及(b)至少一种氢氧化物或烷氧化物的混合物接触,在足以形成N-Si键的条件下进行。该公开进一步涉及参与这些方法的组合物以及由此产生的产品。