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2,2-dimethyl-3,4-dihydro-1H-isoquinolin-2-ium

中文名称
——
中文别名
——
英文名称
2,2-dimethyl-3,4-dihydro-1H-isoquinolin-2-ium
英文别名
——
2,2-dimethyl-3,4-dihydro-1H-isoquinolin-2-ium化学式
CAS
——
化学式
C11H16N+
mdl
——
分子量
162.25
InChiKey
MFJHQWVRHWINPZ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    1.8
  • 重原子数:
    12
  • 可旋转键数:
    0
  • 环数:
    2.0
  • sp3杂化的碳原子比例:
    0.45
  • 拓扑面积:
    0
  • 氢给体数:
    0
  • 氢受体数:
    0

文献信息

  • [EN] PICTET-SPENGLER REACTION FOR THE SYNTHESIS OF TETRAHYDROISOQUINOLINES AND RELATED HETEROCYCLIC COMPOUNDS<br/>[FR] REACTION DE PICTET-SPENGLER POUR LA SYNTHESE DES TETRAHYDRO-ISOQUINOLINES ET COMPOSES HETEROCYCLIQUES ASSOCIES
    申请人:HOECHST MARION ROUSSEL, INC.
    公开号:WO1998013351A1
    公开(公告)日:1998-04-02
    (EN) A commercial scale process for the production of tetrahydroisoquinolines and related heterocyclics by reaction, in mildly acidic conditions, of aryl N-sulfonylethylamines in the presence of suitable Lewis acid, and a compound capable of $i(in situ) generation of formaldehyde. The process is further characterized by formaldehyde being generated by the reaction of the Lewis acid upon the formaldehyde generating agent, instead of being present as an initial reactant. The process further avoids the presence of initial water which destroys the Lewis acid before it can act upon the formaldehyde generating agent.(FR) L'invention porte sur un procédé de production à l'échelle commerciale de tétrahydro-isoquinolines et de composés hétérocycliques associés consistant à faire réagir dans des conditions légèrement acides des aryl-N-sulfonyléthylamines en présence d'un acide de Lewis adapté, et un composé capable de produire un situ de la formaldéhyde. Le procédé se caractérise en outre par le fait que la formaldéhyde est produite par réaction de l'acide de Lewis sur l'agent générateur de formaldéhyde et ne se trouve pas parmi les éléments initiaux de la réaction. Ledit procédé évite la présence initiale d'eau qui détruit l'acide de Lewis avant qu'il ne puisse agir sur l'agent générateur de formaldéhyde.
    本发明涉及在轻微酸性条件下,通过在适合作为路易斯酸的Lewis酸存在下反应对苯基-N-磺酰乙氨基化合物和一种能原位生成甲醛的化合物,大规模生产四氢异喹啉及其相关杂环化合物的过程。该过程的特点是甲醛是由路易斯酸与甲醛生成剂反应产生的,并不是作为初始反应物存在的。此外,该过程避免了初始水分的存在,这种水分会在路易斯酸能够作用于甲醛生成剂之前破坏掉路易斯酸。
  • PICTET-SPENGLER REACTION FOR THE SYNTHESIS OF TETRAHYDROISOQUINOLINES AND RELATED HETEROCYCLIC COMPOUNDS
    申请人:Aventis Pharmaceuticals Inc.
    公开号:EP0929527B1
    公开(公告)日:2004-10-27
  • PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    申请人:FUJIFILM Corporation
    公开号:US20160041465A1
    公开(公告)日:2016-02-11
    The pattern forming method includes (1) forming a film using an active light sensitive or radiation sensitive resin composition, (2) exposing the film to active light or radiation, and (3) developing the exposed film using a developer including an organic solvent, in which the active light sensitive or radiation sensitive resin composition contains a resin (A) having a group which generates a polar group by being decomposed due to the action of an acid, the resin (A) has a phenolic hydroxyl group and/or a phenolic hydroxyl group protected with a group leaving due to the action of an acid, and the developer including the organic solvent contains an additive which forms at least one interaction of an ionic bond, a hydrogen bond, a chemical bond, and a dipole interaction, with the polar group.
  • RESIST PATTERN-FORMING METHOD
    申请人:JSR CORPORATION
    公开号:US20170075224A1
    公开(公告)日:2017-03-16
    A resist pattern-forming method comprises applying a chemically amplified resist material on a substrate to form a resist film on the substrate. The resist film is patternwise exposed to a radioactive ray having a wavelength of no greater than 250 nm. The resist film patternwise exposed is floodwise exposed to a radioactive ray having a wavelength of greater than 250 nm. The resist film floodwise exposed is baked and developed with a developer solution comprising an organic solvent. The chemically amplified resist material comprises a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The component comprises: a radiation-sensitive sensitizer generating agent, and at least one of a radiation-sensitive acid-and-sensitizer generating agent and a radiation-sensitive acid generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (B).
  • US6241873B1
    申请人:——
    公开号:US6241873B1
    公开(公告)日:2001-06-05
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