1,3-Bis(methoxymethyl)naphthalene

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 1,3-Bis(methoxymethyl)naphthalene
• 英文别名: 1,3-bis(methoxymethyl)naphthalene
• 化学式: C₁₄H₁₆O₂
• 分子量: 216.27
• InChiKey: IYGQGVMVPQUBEK-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  16
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.29
• 拓扑面积：
  18.5
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN
  申请人：FUJIFILM Corporation

  公开号：US20140242502A1

  公开（公告）日：2014-08-28

  According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a compound (A) that contains a structure (P) containing at least one phenolic hydroxyl group and a structure (Q) containing at least one phenolic hydroxyl group whose hydrogen atom is replaced by a group (S) with a cyclic structure containing an acid crosslinking group, characterized in that the group (S) with a cyclic structure containing an acid crosslinking group is a group with a polycyclic structure or a group with a cyclic structure containing a hydroxymethyl group and/or an alkoxymethyl group.
• SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION
  申请人：FUJIFILM Corporation

  公开号：US20170005266A1

  公开（公告）日：2017-01-05

  Provided is a semiconductor element having a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound having a repeating unit (IA) represented by the following General Formula (IA) and a repeating unit (IB) represented by the following General Formula (IB). In General Formula (IA), R 1a represents a hydrogen atom, a halogen atom, or an alkyl group. L 1a and L 2a each independently represent a single bond or a linking group. X represents a crosslinkable group. m2a represents an integer of 1 to 5, and in a case where m2a is 2 or more, m2a number of X's may be the same or different from each other, m1a represents an integer of 1 to 5, and in a case where m1a is 2 or more, m1a number of (-L 2a -(X) m2a )'s may be the same or different from each other. In General Formula (IB), R 1b represents a hydrogen atom, a halogen atom, or an alkyl group. L 1b represents a single bond or a linking group, and Ar 1b represents an aromatic ring, m1b represents an integer of 1 to 5.
• SEMICONDUCTOR DEVICE AND INSULATING LAYER-FORMING COMPOSITION
  申请人：FUJIFILM Corporation

  公开号：US20170054076A1

  公开（公告）日：2017-02-23

  Provided is a semiconductor device which includes a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by the following Formula (IA) and a repeating unit (IB) represented by the following Formula (IB); and an insulating layer-forming composition which is used for forming an insulating layer of a semiconductor device and contains a polymer compound that has the following repeating units (IA) and (IB). In Formulae, R 1a and R 1b each independently represent a hydrogen atom, a halogen atom, or an alkyl group. L 1a , L 2a , and L 1b each independently represent a single bond or a linking group. X represents a crosslinkable group and Y B represents a decomposable group or a hydrogen atom. m1a and m2a each independently represent an integer of 1 to 5. The symbol “*” represents a bonding position of the repeating units.
• US9400430B2
  申请人：——

  公开号：US9400430B2

  公开（公告）日：2016-07-26
• US9905768B2
  申请人：——

  公开号：US9905768B2

  公开（公告）日：2018-02-27