Spiro[13-oxapentacyclo[12.8.0.03,12.04,9.017,22]docosa-1(14),3(12),4(9),5,7,10,15,17(22),18,20-decaene-2,9'-fluorene]-7,19-diol

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 苯并吡喃
• 英文名称: Spiro[13-oxapentacyclo[12.8.0.03,12.04,9.017,22]docosa-1(14),3(12),4(9),5,7,10,15,17(22),18,20-decaene-2,9'-fluorene]-7,19-diol
• 英文别名: spiro[13-oxapentacyclo[12.8.0.03,12.04,9.017,22]docosa-1(14),3(12),4(9),5,7,10,15,17(22),18,20-decaene-2,9'-fluorene]-7,19-diol
• 化学式: C₃₃H₂₀O₃
• 分子量: 464.52
• InChiKey: YKFIRTHLMHQKGF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  8.1
• 重原子数：
  36
• 可旋转键数：
  0
• 环数：
  8.0
• sp3杂化的碳原子比例：
  0.03
• 拓扑面积：
  49.7
• 氢给体数：
  2
• 氢受体数：
  3

文献信息

• RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20160145231A1

  公开（公告）日：2016-05-26

  A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

  描述了一种包含由通式（1）或（2）表示的化合物的光刻胶组合物，使用该组合物形成光刻胶图案的方法，用于该组合物的多酚化合物，以及可以由其衍生的醇化合物。
• ALLYLOXY DERIVATIVE, RESIST UNDERLAYER FORMING COMPOSITION USING THE SAME, AND METHOD OF MANUFACTURING RESIST UNDERLAYER AND SEMICONDUCTOR DEVICE USING THE SAME
  申请人：Merck Patent GmbH

  公开号：US20210181636A1

  公开（公告）日：2021-06-17

  The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.

  本发明提供了一种具有良好耐热性和填隙性的抗阻层形成组合物。此外，本发明还提供了使用该组合物制造抗阻层和半导体器件的方法。[解决方案手段] 包括具有特定基团的烯丙氧衍生物和溶剂的组合物，以及使用该组合物制造抗阻层和半导体器件的方法。
• Allyloxy derivative, resist underlayer forming composition using the same, and method of manufacturing resist underlayer and semiconductor device using the same
  申请人：Merck Patent GmbH

  公开号：US11366389B2

  公开（公告）日：2022-06-21

  The present invention provides a resist underlayer forming composition, which is well in heat resistance and gap filling. Further, the present invention provides methods of manufacturing a resist underlayer and semiconductor device using it. [Means for Solution] A composition comprising a allyloxy derivative having a specific group and a solvent, and methods of manufacturing a resist underlayer and semiconductor device using it.

  本发明提供了一种具有良好热稳定性和填充性能的抗蚀剂底层组合物。此外，本发明还提供了使用该组合物制造抗蚀剂底层和半导体器件的方法。 【技术方案】本发明提供了一种包含特定基团的丙烯酰氧基衍生物和溶剂的组合物，以及使用该组合物制造抗蚀剂底层和半导体器件的方法。
• RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
  申请人：Echigo Masatoshi

  公开号：US20140248561A1

  公开（公告）日：2014-09-04

  A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.
• MATERIAL FOR FORMING UNDERLAYER FILM LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD
  申请人：Echigo Masatoshi

  公开号：US20150090691A1

  公开（公告）日：2015-04-02

  Material for forming an underlayer film for lithography, which has a high carbon concentration, a low oxygen concentration, a relatively high heat resistance and also a relatively high solvent solubility, and which can be applied to a wet process is disclosed. Material for forming an underlayer film for lithography contains a compound represented by general formula (1).