2-(Acetylsulfamoyl)ethyl 2,2,3,3,4,4,4-heptafluorobutanoate

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 卤代烷
• 英文名称: 2-(Acetylsulfamoyl)ethyl 2,2,3,3,4,4,4-heptafluorobutanoate
• 英文别名: 2-(acetylsulfamoyl)ethyl 2,2,3,3,4,4,4-heptafluorobutanoate
• 化学式: C₈H₈F₇NO₅S
• 分子量: 363.21
• InChiKey: CEAKZSDREZFHJS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.5
• 重原子数：
  22
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  0.75
• 拓扑面积：
  97.9
• 氢给体数：
  1
• 氢受体数：
  12

文献信息

• PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND
  申请人：FUJIFILM CORPORATION

  公开号：US20160070167A1

  公开（公告）日：2016-03-10

  There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.

  提供了一种图案形成方法，包括（i）形成一种薄膜，其中包含一种感光树脂组成物，该组成物包含（A）一种特定化学式代表的化合物，（B）一种不同于化合物（A）的化合物，在接受光辐射后能够产生酸，并且（P）一种树脂，该树脂不会与从化合物（A）产生的酸发生反应，并且能够通过来自化合物（B）产生的酸的作用降低有机溶剂含有的显影剂的溶解度，（ii）曝光薄膜，（iii）使用有机溶剂含有的显影剂对曝光后的薄膜进行显影，形成负图案；上述感光树脂组成物；使用该组成物的抗蚀膜。
• US9523912B2
  申请人：——

  公开号：US9523912B2

  公开（公告）日：2016-12-20
• [EN] PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND<br/>[FR] PROCÉDÉ DE FORMATION DE MOTIF, COMPOSITION DE RÉSINE SENSIBLE À DES RAYONS ACTINIQUES OU À UN RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE, DISPOSITIF ET COMPOSÉ ÉLECTRONIQUES
  申请人：FUJIFILM CORP

  公开号：WO2014133187A1

  公开（公告）日：2014-09-04

  There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.