Resist compositions comprising as the base resin a polymer using tert-amyloxystyrene as a reactive group which is decomposable under the action of an acid to increase solubility in alkali have advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, a high sensitivity, and a high resolution in the baking temperature range of 100-110° C. which is unachievable with tert-butoxystyrene. The compositions are best suited as a chemically amplified resist material for micropatterning in the manufacture of VLSI.
抗蚀组合物包括以 tert-amyloxystyrene 作为反应基团的聚合物作为基础
树脂,该基团在酸的作用下分解以增加在碱性溶液中的溶解度。这种组合物具有显着增强的碱溶解速率对比度,高灵敏度和高分辨率,适用于100-110°C的烘焙温度范围,而 tert-butoxystyrene 则无法实现。这些组合物最适合作为
化学增强抗蚀材料用于微图案制造的VLSI。