Diphenyl(4-methylphenyl)sulphonium nonaflate

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 卤代烷
• 英文名称: Diphenyl(4-methylphenyl)sulphonium nonaflate
• 英文别名: [(4-methylphenyl)-diphenyl-λ4-sulfanyl] 1,1,2,2,3,3,4,4,4-nonafluorobutane-1-sulfonate
• 化学式: C₂₃H₁₇F₉O₃S₂
• 分子量: 576.5
• InChiKey: YATIYGBRFSRDLH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  8.8
• 重原子数：
  37
• 可旋转键数：
  8
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.22
• 拓扑面积：
  52.8
• 氢给体数：
  0
• 氢受体数：
  13

文献信息

• RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20160145231A1

  公开（公告）日：2016-05-26

  A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

  描述了一种包含由通式（1）或（2）表示的化合物的光刻胶组合物，使用该组合物形成光刻胶图案的方法，用于该组合物的多酚化合物，以及可以由其衍生的醇化合物。
• Resist composition and patterning process
  申请人：Watanabe Satoshi

  公开号：US20100009299A1

  公开（公告）日：2010-01-14

  The present invention relates to: a resist composition such as a chemically amplified resist composition for providing an excellent pattern profile even at a substrate-side boundary face of resist, in addition to a higher resolution in photolithography for micro-fabrication, and particularly in photolithography adopting, as an exposure source, KrF laser, ArF laser, F 2 laser, ultra-short ultraviolet light, electron beam, X-rays, or the like; and a patterning process utilizing the resist composition. The present invention provides a chemically amplified resist composition comprising one or more kinds of amine compounds or amine oxide compounds (except for those having a nitrogen atom of amine or amine oxide included in a ring structure of an aromatic ring) at least having a carboxyl group and having no hydrogen atoms covalently bonded to a nitrogen atom as a basic center.

  本发明涉及一种抗蚀组合物，例如用于在抗蚀物的基板侧边界面上提供优异图案轮廓的化学增感抗蚀组合物，除了在微细加工的光刻工艺中具有更高的分辨率外，特别是在采用KrF激光、ArF激光、F2激光、超短紫外光、电子束、X射线等作为曝光光源的光刻工艺中；以及利用该抗蚀组合物的图案化工艺。本发明提供一种化学增感抗蚀组合物，其包括一种或多种胺化合物或胺氧化合物（除了那些在芳香环的环结构中不含有胺或胺氧原子的氮原子的化合物），至少具有一个羧基，并且没有氢原子共价键结合到氮原子作为碱性中心。
• RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR
  申请人：HADA Hideo

  公开号：US20120264061A1

  公开（公告）日：2012-10-18

  A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) including a compound represented by (b1-1), a compound represented by (b1-1′) and/or a compound represented by (b1-1″) (R 1 ″-R 3 ″ represents an aryl group or an alkyl group, provided that at least one of R 1 ″-R 3 ″ represents a substituted aryl group being substituted with a group represented by (b1-1-0), and two of R 1 ″-R 3 ″ may be mutually bonded to form a ring with the sulfur atom; X represents a C 3 -C 30 hydrocarbon group; Q 1 represents a carbonyl group-containing divalent linking group; X 10 represents a C 1 -C 30 hydrocarbon group; Q 3 represents a single bond or a divalent linking group; Y 10 represents —C(═O)— or —SO 2 —; Y 11 represents a C 1 -C 10 alkyl group or a fluorinated alkyl group: Q 2 represents a single bond or an alkylene group; and W represents a C 2 -C 10 alkylene group).

  一种抗蚀组合物，包括在酸和酸发生剂组分（B）的作用下，在碱性显影溶液中表现出改变溶解性的基础组分（A），所述酸发生剂组分（B）包括由（b1-1）表示的化合物，由（b1-1'）表示的化合物和/或由（b1-1''）表示的化合物（R1''-R3''表示芳基或烷基，但至少其中一个R1''-R3''表示被(b1-1-0)表示的基团取代的取代芳基，且其中两个R1''-R3''可以相互键合以形成与硫原子形成环的环；X表示C3-C30烃基；Q1表示含有羰基的二价连接基团；X10表示C1-C30烃基；Q3表示单键或二价连接基团；Y10表示—C(═O)—或—SO2—；Y11表示C1-C10烷基或氟代烷基；Q2表示单键或烷基基团；W表示C2-C10烷基基团。
• Novel photoacid generators, resist compositions, and patterning process
  申请人：Ohsawa Youichi

  公开号：US20080085469A1

  公开（公告）日：2008-04-10

  Photoacid generators generate sulfonic acids of formula (1a) upon exposure to high-energy radiation. RC(═O)R 1 —COOCH(CF 3 )CF 2 SO 3 − H + (1a) R is hydroxyl, alkyl, aryl, hetero-aryl, alkoxy, aryloxy or hetero-aryloxy, R 1 is a divalent organic group which may have a heteroatom (O, N or S) containing substituent, or R 1 may form a cyclic structure with R. The photoacid generators are compatible with resins and can control acid diffusion and are thus suited for use in chemically amplified resist compositions.

  光酸发生剂在高能辐射作用下生成式（1a）的磺酸。RC(═O)R1—COOCH(CF3)CF2SO3−H+(1a)中，R为羟基、烷基、芳基、杂芳基、烷氧基、芳氧基或杂芳氧基，R1为可能含有杂原子（O、N或S）取代基的二价有机基团，或R1可与R形成环状结构。这些光酸发生剂与树脂相容，可以控制酸的扩散，因此适用于化学增感抗蚀组合物中的使用。
• Nitrogen-containing organic compound, resist composition and patterning process
  申请人：Watanabe Takeru

  公开号：US20080102405A1

  公开（公告）日：2008-05-01

  A resist composition comprising as a quencher a nitrogen-containing organic compound bearing a nitrogen-containing heterocycle and having a molecular weight of at least 380 exhibits a high resolution and satisfactory mask coverage dependence and is useful in microfabrication using electron beam or deep-UV.

  一种抗蚀组合物包括作为猝灭剂的氮含有机化合物，其含有氮杂环，并且分子量至少为380，具有高分辨率和令人满意的掩膜覆盖度依赖性，并且适用于使用电子束或深紫外光进行微细加工。