6-二氮杂-5,6-二氢-5-氧代-1-萘磺酸 | 20546-03-6

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 中文名称: 6-二氮杂-5,6-二氢-5-氧代-1-萘磺酸
• 英文名称: (6E)-6-diazo-5-oxonaphthalene-1-sulfonic acid
• CAS: 20546-03-6
• 化学式: C10H6N2O4S
• 分子量: 250.23
• InChiKey: BNWKXMCELVEAPW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.6
• 重原子数：
  17
• 可旋转键数：
  1
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.0
• 拓扑面积：
  81.8
• 氢给体数：
  1
• 氢受体数：
  5

文献信息

• Positive photoresist systems
  申请人：ROHM AND HAAS COMPANY

  公开号：EP0145355A2

  公开（公告）日：1985-06-19

  This invention concerns a positive photoresist comprising a preformed, non-crosslinked polglutarimide dissolved in a non-aqueous, spinning solvent. The positive photoresist may be used to achieve high resolution images by exposure to a wide range of wavelengths and development using an aqueous base developer. The photoresist is also suitable for use as a planarizing layer in a multiple layer system.

  本发明涉及一种正性光刻胶，它包括一种溶解在非水性纺丝溶剂中的预制非交联多聚戊二酰亚胺。 这种正性光刻胶可用于通过对各种波长进行曝光和使用水基显影剂进行显影来获得高分辨率图像。 这种光刻胶还可用作多层系统中的平面化层。
• Tailoring of novolak/diazoquinone positive resists by acylation
  申请人：International Business Machines Corporation

  公开号：EP0150315A2

  公开（公告）日：1985-08-07

  A modification of the solubility of novolak-diazoquinone positive resists by acylation of phenolic hydroxyl groups is described.

  介绍了通过酚羟基酰化来改变酚重醌阳性抗蚀剂溶解度的方法。
• Selected trinuclear novolak oligomers and their use in photo-active compounds and radiation sensitive mixtures
  申请人：OCG MICROELECTRONIC MATERIALS, INC.

  公开号：EP0685766A1

  公开（公告）日：1995-12-06

  A trinuclear novolak oligomer characterized by the formula (I): wherein each X is selected from the group consisting of hydrogen, hydroxyl group and halide group and Y is selected from the group consisting of a lower alkyl group having 1-4 carbon atoms and a halogen atom.

  一种三核新酚醛低聚物，其特征为式 (I)： 其中每个 X 选自氢、羟基和卤化物基团组成的组，Y 选自具有 1-4 个碳原子的低级烷基和卤素原子组成的组。
• POSITIVE RESIST COMPOSITION
  申请人：Asahi Kasei Kabushiki Kaisha

  公开号：EP1096316A1

  公开（公告）日：2001-05-02

  A positive resist composition comprising a hydroxypolyamide represented by the following general formula (I) and a photoactive component: (wherein R1 and R3 may be the same or different and are each a tetravalent aromatic group; R2 is a bivalent aromatic group; n is an integer of 2 to 150; and Z is a monovalent organic group and at least 40% of Z is a group represented by the following structural formula (II):         -X-R4-(COOH)m     (II) (wherein X is a carbonyl group or a sulfonyl group; m is an integer of 0 to 3 with a proviso that m is not 0 when X is a carbonyl group; R4 is an aliphatic group not including alkenyl group or alkynyl group, an alicyclic group or an aromatic group; and, when X is a carbonyl group and R4 is an alicyclic group or an aromatic group, at least one of the carboxylic groups is at the ortho position)).

  一种阳离子抗蚀剂组合物，包括由下式通式(I)表示的羟基聚酰胺和一种光活性成分： (其中 R1 和 R3 可以相同或不同，且各自为四价芳香族基团；R2 为二价芳香族基团；n 为 2 至 150 的整数；Z 为一价有机基团，且至少 40% 的 Z 为由以下结构式（II）表示的基团： -X-R4-(COOH)m (II) (其中 X 是羰基或磺酰基；m 是 0 至 3 的整数，但当 X 是羰基时，m 不为 0；R4 是脂肪族基团，不包括烯基或炔基、脂环族基团或芳香族基团；当 X 是羰基且 R4 是脂环族基团或芳香族基团时，至少有一个羧基位于正交位置))。
• PHOTOSENSITIVE POLYSILAZANE COMPOSITION AND METHOD OF FORMING PATTERNED POLYSILAZANE FILM
  申请人：TonenGeneral Sekiyu K.K.

  公开号：EP1164435A1

  公开（公告）日：2001-12-19

  A photosensitive polysilazane which may be used as a positive-tone photoresist, and a method of forming a patterned polysilazane film by use of such a composition are provided. The photosensitive polysilazane composition of the invention is characterized by comprising a polysilazane, particularly polymethylsilazane or polyphenylsilazane, and an optically acid-generating agent. The patterned polysilazane film is obtained by exposing a coating of the photosensitive polysilazane composition of the invention to light in a pattern and dissolving off the exposed portion.

  本发明提供了一种可用作正色调光刻胶的光敏聚硅氮烷，以及使用这种组合物形成图案化聚硅氮烷薄膜的方法。本发明的光敏聚硅氮烷组合物的特点是由一种聚硅氮烷（特别是聚甲基硅氮烷或聚苯基硅氮烷）和一种光学酸生成剂组成。将本发明的光敏聚硅氮烷组合物涂层按一定图案对光照射，然后溶解掉照射部分，即可得到图案化的聚硅氮烷薄膜。