1-(4-Hydroxynaphthalen-1-yl)tetrahydrothiophenium

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 1-(4-Hydroxynaphthalen-1-yl)tetrahydrothiophenium
• 英文别名: 4-(thiolan-1-ium-1-yl)naphthalen-1-ol
• 化学式: C14H15OS+
• 分子量: 231.33
• InChiKey: TYXGWNTYNTZQLI-UHFFFAOYSA-O

计算性质

• 辛醇/水分配系数(LogP)：
  3.8
• 重原子数：
  16
• 可旋转键数：
  1
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.29
• 拓扑面积：
  21.2
• 氢给体数：
  1
• 氢受体数：
  1

文献信息

• NITROGEN-CONTAINING ORGANIC COMPOUND, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SAGEHASHI Masayoshi

  公开号：US20120052441A1

  公开（公告）日：2012-03-01

  An aralkylcarbamate of imidazole base is effective as the quencher. In a chemically amplified positive resist composition comprising the carbamate, deprotection reaction of carbamate takes place by reacting with the acid generated upon exposure to high-energy radiation, whereby the composition changes its basicity before and after exposure, resulting in a pattern profile with advantages including high resolution, rectangular shape, and minimized dark-bright difference.

  咪唑基团的芳烷基碳酸酯作为猝灭剂是有效的。在包含该碳酸酯的化学放大正性光刻胶组合物中，碳酸酯的去保护反应是通过与在暴露于高能辐射时产生的酸反应来实现的，通过这种方式，组合物在曝光前后改变其碱性，从而得到具有高分辨率、矩形形状和最小化暗亮差异等优点的图案轮廓。
• MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170131635A1

  公开（公告）日：2017-05-11

  A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R 1 -R 6 are monovalent hydrocarbon groups, X 1 is a divalent hydrocarbon group, Z 1 is an aliphatic group, Z 2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

  提供了一个化学式为（1a）或（1b）的单体，其中A是一个可聚合的基团，R1-R6是一价碳氢基团，X1是一个二价碳氢基团，Z1是一个脂肪基团，Z2形成一个脂环基团，k=0或1，m=1或2，n=1到4。通过聚合单体得到了一种有用的聚合物。包含该聚合物的抗蚀组合物具有改善的显影性能，并且经过处理形成具有高对比度、高分辨率和耐蚀性的负图案，该负图案在碱性显影剂中不溶。
• RESIST COMPOSITION, PATTERN FORMING PROCESS, POLYMER, AND MONOMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170184967A1

  公开（公告）日：2017-06-29

  A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on γ-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.

  提供一种聚合物，其中包含含有特定内酯环的重复单元，并且在融合环内酯的γ-丁内酯骨架上具有烷基基团，以及在内酯结构和聚合物主链之间具有烷基酯取代基团。以该聚合物为基础树脂的抗蚀组合物在DOF边缘和MEF等性能方面得到改善，并且非常有效用于精确微图案化。
• HEMIACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160238930A1

  公开（公告）日：2016-08-18

  A polymer for resist use is obtainable from a hemiacetal compound having formula (1 a ) wherein R 1 is H, CH 3 or CF 3 , R 2 to R 4 each are H or a monovalent hydrocarbon group, X 1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k 1 =0 or 1, and k 2 =0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.

  从具有以下式（1a）的半缩醛化合物获得用于抗蚀的聚合物，其中R1为H、CH3或CF3，R2至R4分别为H或单价碳氢基团，X1为二价碳氢基团，ZZ表示具有半缩醛结构的非芳香性4至20个碳原子的单环或多环环，k1=0或1，k2=0至3。包含该聚合物的抗蚀组合物显示出在正片和负片显影过程中控制酸扩散和低粗糙度。
• ONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160320698A1

  公开（公告）日：2016-11-03

  An onium salt having an anion moiety of a specific structure is an effective photoacid generator. A resist composition comprising the onium salt has the advantages of compatibility and reduced acid diffusion and forms a pattern with a good balance of sensitivity and MEF, rectangularity, and minimal defects.

  具有特定结构的阴离子基团的醇盐是一种有效的光酸发生剂。包含该醇盐的抗蚀组合物具有兼容性和减少酸扩散的优点，并形成具有良好灵敏度和MEF、矩形度以及最小缺陷的图案。