10,10-bis-(4-hydroxy-phenyl)-10H-phenanthren-9-one | 855367-55-4

• 分子结构分类: 有机化合物 - 苯类化合物 - 萘
• 英文名称: 10,10-bis-(4-hydroxy-phenyl)-10H-phenanthren-9-one
• 英文别名: 10,10-Bis-(4-hydroxy-phenyl)-10H-phenanthren-9-on；10,10-Bis(4-hydroxyphenyl)phenanthren-9-one
• CAS: 855367-55-4
• 化学式: C₂₆H₁₈O₃
• 分子量: 378.427
• InChiKey: AMLUXZBBGZCNDA-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.5
• 重原子数：
  29
• 可旋转键数：
  2
• 环数：
  5.0
• sp3杂化的碳原子比例：
  0.04
• 拓扑面积：
  57.5
• 氢给体数：
  2
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  10,10-bis-(4-hydroxy-phenyl)-10H-phenanthren-9-one 在 sodium hydroxide 、 锌 作用下， 生成 (+/-)-10-Hydroxy-9,9-bis-(4-methoxy-phenyl)-9,10-dihydro-phenanthren
  参考文献：
  名称：

  Ssergejew, Zhurnal Obshchei Khimii, 1937, vol. 7, p. 1654,1659

  摘要：

  DOI：
• 作为产物：
  描述：

  9,10-dihydro-10,10-dichlorophenanthren-9-one 、 苯酚 生成 10,10-bis-(4-hydroxy-phenyl)-10H-phenanthren-9-one
  参考文献：
  名称：

  Goldschmidt; Vogt; Bredig, Justus Liebigs Annalen der Chemie, 1925, vol. 445, p. 135

  摘要：

  DOI：

文献信息

• THE REARRANGEMENT OF 9,10-DIARYLDIHYDROPHENANTHRENEDIOLS
  作者：W. E. Bachmann

  DOI：10.1021/ja01344a036

  日期：1932.5
• POLYCARBONATE RESIN AND ELECTROPHOTOGRAPHIC PHOTOSENSITIVE BODY USING THE SAME
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：EP2048180B1

  公开（公告）日：2012-03-07
• Resist composition
  申请人：Echigo Masatoshi

  公开号：US20080153031A1

  公开（公告）日：2008-06-26

  A radiation-sensitive composition containing a resist compound A, an acid generator B, and an acid crosslinking agent C. The resist compound A is (a) a polyphenol compound which is produced by the condensation of a C 5-45 aromatic ketone or aromatic aldehyde with a C 6-15 compound having from 1 to 3 phenolic hydroxyl groups, and, (b) its molecular weight is form 300 to 5000. The radiation-sensitive composition is solvent-soluble and exhibits a high sensitivity, high resolution, and high heat resistance.
• COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN
  申请人：Oguro Dai

  公开号：US20100316950A1

  公开（公告）日：2010-12-16

  A composition for forming an underlayer film for lithography for imparting excellent optical characteristics and etching resistance to an underlayer film for lithography, an underlayer film being formed of the composition and having a high refractive index (n) and a low extinction coefficient (k), being transparent, having high etching resistance, containing a significantly small amount of a sublimable component, and a method for forming a pattern using the underlayer film are provided. The composition for forming an underlayer film contains a naphthalene formaldehyde polymer having a specific unit obtained by reacting naphthalene and/or alkylnaphthalene with formaldehyde, and an organic solvent.
• US7871751B2
  申请人：——

  公开号：US7871751B2

  公开（公告）日：2011-01-18