Cyclohexylsulfonylsulfonylcyclohexane

• 分子结构分类: 有机化合物 - 有机硫化合物 - 磺酰类
• 英文名称: Cyclohexylsulfonylsulfonylcyclohexane
• 化学式: C₁₂H₂₂O₄S₂
• 分子量: 294.4
• InChiKey: ODOYKCYDOVBTAR-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.8
• 重原子数：
  18
• 可旋转键数：
  3
• 环数：
  2.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  85
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为反应物：
  描述：

  烯丙苯 、 Cyclohexylsulfonylsulfonylcyclohexane 在 fac-tris(2-phenylpyridinato-N,C2')iridium(III) 、 2,4,6-Triisopropylthiophenol 作用下， 以73 %的产率得到(3-(cyclohexylsulfonyl)propyl)benzene
  参考文献：
  名称：

  未活化烯烃的氢磺酰化涉及通过能量转移模拟光催化活化对称二砜产生磺酰基自由基

  摘要：

  使用 2,4,6-三异丙基苯硫酚作为氢原子供体 (HD)，开发了未活化烯烃与对称二砜的可见光光催化氢磺酰化反应。涉及通过可见光光催化活化从二砜产生两个磺酰基自由基。机理研究排除了两个磺酰自由基是通过能量转移机制由对称二砜产生的，正如之前在较低氧化态硫-硫基反应物（即硫代磺酸盐和二硫化物）中发现的那样。相反，会发生能量转移模拟过程。这涉及通过用二砜氧化猝灭激发的光催化剂 (*PC) 来实现光诱导电子转移 (PET)，生成磺酰基自由基和亚磺酸盐副产物，然后用该副产物 (SET) 还原氧化的光催化剂 (PC •+ ) ）产生第二个磺酰自由基和光催化剂（PC）。氢磺酰化反应可以在室温下在碳酸二甲酯中进行，具有广泛的官能团兼容性，并且如果使用2,4,6-三取代苯硫酚作为HD，则可以轻松回收生成的二硫化物副产物。未活化烯烃的可见光光催化氢磺酰化反应与使用绿色指标的最先进技术进行了比较。

  DOI：

  10.1021/acscatal.4c02866

文献信息

• COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING THE COMPOUND OR RESIN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20170073288A1

  公开（公告）日：2017-03-16

  The compound according to the present invention is represented by a specific formula. The compound according to the present invention has a structure according to the specific formula, and therefore can be applied to a wet process and is excellent in heat resistance and etching resistance. In addition, the compound according to the present invention has such a specific structure, and therefore has a high heat resistance, a relatively high carbon concentration, a relatively low oxygen concentration and also a high solvent solubility. Therefore, the compound according to the present invention can be used to form an underlayer film whose degradation is suppressed at high-temperature baking and which is also excellent in etching resistance to oxygen plasma etching or the like. Furthermore, the compound is also excellent in adhesiveness with a resist layer and therefore can form an excellent resist pattern.

  根据本发明，该化合物由特定的公式表示。根据本发明，该化合物具有特定公式的结构，因此可应用于湿法工艺，具有优异的耐热性和耐蚀性。此外，根据本发明，该化合物具有特定结构，因此具有高耐热性、相对较高的碳浓度、相对较低的氧浓度以及高溶剂溶解性。因此，根据本发明的化合物可用于形成在高温烘烤时降解受抑制且在氧等离子体蚀刻中具有优异耐蚀性的底层膜。此外，该化合物在与光阻层的粘附性方面也表现出色，因此可形成优异的光阻图案。
• NOVEL TETRACARBOXYLIC DIANHYDRIDE, POLYIMIDE RESIN AND METHOD FOR PRODUCING THE SAME, PHOTOSENSITIVE RESIN COMPOSITIONS, PATTERNING PROCESS, METHOD FOR FORMING CURED FILM, INTERLAYER INSULATING FILM, SURFACE PROTECTIVE FILM, AND ELECTRONIC PARTS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20190169211A1

  公开（公告）日：2019-06-06

  The present invention has been made in view of the circumstances herein. An object of the present invention is to provide: a tetracarboxylic dianhydride which can lead to a polyimide usable as a base resin of a photosensitive resin composition capable of forming a fine pattern and obtaining high resolution without impairing excellent characteristics such as mechanical strength and adhesiveness; a polyimide resin obtained by using the tetracarboxylic dianhydride; and a method for producing the polyimide resin. The tetracarboxylic dianhydride is shown by the following general formula (1).

  本发明是基于本文中的情况而作出的。本发明的目的是提供：一种四羧酸二酐，可导致聚酰亚胺，作为感光树脂组合物的基树脂，能够形成细微图案并获得高分辨率，同时不损害优异的特性，如机械强度和粘附性；通过使用该四羧酸二酐获得的聚酰亚胺树脂；以及生产该聚酰亚胺树脂的方法。该四羧酸二酐由以下通用式（1）所示。
• MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20180101096A1

  公开（公告）日：2018-04-12

  A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used. (in formula (0), each X independently represents an oxygen atom or a sulfur atom, or a non-crosslinked state, R 1 represents a 2 n -valent group having 1 to 30 carbon atoms, or a single bond, each R 0 independently represents a straight, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, a straight, branched or cyclic alkenyl group having 2 to 30 carbon atoms, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group or a hydroxyl group, the alkyl group, the alkenyl group and the aryl group each optionally include a cyanato group, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group, a hydroxyl group, an ether bond, a ketone bond or an ester bond, each m 1 is independently an integer of 0 to 4, in which at least one m 1 is an integer of 1 to 4, each m 2 is independently an integer of 0 to 3, n is an integer of 1 to 4, and each p is independently 0 or 1.)

  一种用于光刻的底层膜的材料，其中使用以下式(0)代表的化合物。(在式(0)中，每个X独立表示氧原子或硫原子，或非交联状态，R1表示具有1到30个碳原子的2n价基团，或者单键，每个R0独立表示具有1到30个碳原子的直链、支链或环烷基，具有6到30个碳原子的芳基，具有2到30个碳原子的直链、支链或环烯基，硫醇基，卤素基，硝基，氨基，羧基或羟基，烷基、烯基和芳基中每个可选包括氰酸基、硫醇基、卤素基、硝基、氨基、羧基、羟基、醚键、酮键或酯键，每个m1独立地为0到4的整数，其中至少一个m1为1到4的整数，每个m2独立地为0到3的整数，n为1到4的整数，每个p独立地为0或1。)
• COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, RESIST PATTERN FORMING METHOD, CIRCUIT PATTERN FORMING METHOD, AND PURIFICATION METHOD OF COMPOUND OR RESIN
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20180029968A1

  公开（公告）日：2018-02-01

  A compound represented by the following formula (1). (in formula (1), R 1 represents a 2n-valent group having 1 to 30 carbon atoms, R 2 to R 5 each independently represent an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group or a hydroxyl group, provided that at least one R 4 and/or at least one R 5 represents an alkoxy group having 1 to 30 carbon atoms, m 2 and m 3 are each independently an integer of 0 to 8, m 4 and m 5 are each independently an integer of 0 to 9, provided that m 4 and m 5 are not 0 at the same time, n is an integer of 1 to 4, and p 2 to p 5 are each independently an integer of 0 to 2.)

  公式（1）代表的化合物。（在公式（1）中，R1代表具有1至30个碳原子的2n价基团，R2至R5分别独立代表具有1至10个碳原子的烷基基团，具有6至10个碳原子的芳基基团，具有2至10个碳原子的烯烃基团，具有1至30个碳原子的烷氧基团，硫醇基团或羟基团，前提是至少一个R4和/或至少一个R5代表具有1至30个碳原子的烷氧基团，m2和m3分别独立地是0至8的整数，m4和m5分别独立地是0至9的整数，前提是m4和m5不同时为0，n是1至4的整数，p2至p5分别独立地是0至2的整数。）
• COMPOUND, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD
  申请人：MITSUBISHI GAS CHEMICAL COMPANY, INC.

  公开号：US20150376202A1

  公开（公告）日：2015-12-31

  The material for forming an underlayer film for lithography of the present invention contains a compound having a structure represented by the following general formula (1). (in formula (1), each X independently represents an oxygen atom or a sulfur atom, R 1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, R 2 represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, m is an integer of 0 to 3, n is an integer of 1 to 4, p is 0 or 1, and q is an integer of 1 to 100.)

  本发明的光刻下层膜材料包含具有以下一般式（1）所代表结构的化合物。（在式（1）中，每个X独立地代表氧原子或硫原子，R1代表一个单键或具有1至30个碳原子的2n-价碳氢基团，碳氢基团可能具有一个环状碳氢基团，一个双键，一个杂原子或具有6至30个碳原子的芳香族基团，R2代表具有1至10个碳原子的直链、支链或环状烷基基团，具有6至10个碳原子的芳基基团，具有2至10个碳原子的烯基基团，或一个羟基，m是0到3的整数，n是1到4的整数，p是0或1，q是1到100的整数。）