1-Azoniatricyclo[3.3.3.01,5]undecane

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 吡咯里西啶类
• 英文名称: 1-Azoniatricyclo[3.3.3.01,5]undecane
• 化学式: C10H18N+
• 分子量: 152.26
• InChiKey: HKNFEDWZNQUTOB-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.6
• 重原子数：
  11
• 可旋转键数：
  0
• 环数：
  3.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  0
• 氢给体数：
  0
• 氢受体数：
  0

文献信息

• MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170008982A1

  公开（公告）日：2017-01-12

  A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.

  一种聚合物，包含由可聚合单体衍生的重复单元，该单体具有两种羟基苯甲酸甲酯结构，羟基上取代有酸不稳定基团，作为正性光刻胶组成中的基础树脂，尤其是化学放大正性光刻胶组成中。该光刻胶组成形成一种光刻胶膜，通过光刻技术加工成具有高分辨率、最小边缘粗糙度和蚀刻抗性的良好轮廓图案。
• THIOTUNGSTATE ANALOGUES AND USES THEREOF
  申请人：Ternansky Robert J.

  公开号：US20110151022A1

  公开（公告）日：2011-06-23

  The current invention provides novel thiotungstate derivatives, methods of making novel thiotungstate derivatives, pharmaceutical compositions of novel thiotungstate derivatives, methods of using novel thiotungstate derivatives to treat diseases associated with aberrant vascularization, copper metabolism disorders and obesity and methods of using pharmaceutical compositions of thiotungstate derivatives to treat diseases associated with aberrant vascularization, copper metabolism disorders, neurodegenerative disorders, obesity or NF-κB dysregulation.
• MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170226252A1

  公开（公告）日：2017-08-10

  A monomer having a substituent group capable of polarity switch under the action of acid is provided. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high resolution and etch resistance which is insoluble in alkaline developer.
• US7189865B2
  申请人：——

  公开号：US7189865B2

  公开（公告）日：2007-03-13
• US7851505B2
  申请人：——

  公开号：US7851505B2

  公开（公告）日：2010-12-14