Abstract Silyl-substituted Fischer-typecarbenecomplexes show unique behavior when treated with silanes. In toluene, all three kinds (Cr, Mo, W) of methyldiphenylsilyl-substituted carbenecomplex react with silanes to give direct insertion products in moderate to high yield. On the other hand, the reactions in THF give different kinds of product depending on the center metal. Thus, in addition to the
MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM
申请人:Nakagawa Hisashi
公开号:US20110042789A1
公开(公告)日:2011-02-24
A chemical vapor deposition material includes an organosilane compound shown by the following general formula (1).
wherein R
1
and R
2
individually represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a vinyl group, or a phenyl group, R
3
and R
4
individually represent an alkyl group having 1 to 4 carbon atoms, an acetyl group, or a phenyl group, m is an integer from 0 to 2, and n is an integer from 1 to 3.