申请人:International Business Machines Incorporated
公开号:US05985524A1
公开(公告)日:1999-11-16
The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.
本发明涉及一种使用化学增强、辐射敏感的双层光阻形成双层光阻图像的工艺。所述双层光阻被放置在基板上,包括(i)顶部成像层,包括辐射敏感的酸发生剂和具有酸可裂解的硅乙氧基的乙烯基聚合物和(ii)有机底层。所述双层光阻用于集成电路的制造。