pentakis(dimethylamino)chlorodisilane | 145700-15-8

• 分子结构分类: 有机化合物 - 有机盐 - 有机金属盐
• 英文名称: pentakis(dimethylamino)chlorodisilane
• 英文别名: pentakis(dimethylamino)chloro disilane；Pentakis(dimethylamino) chloro disilane；N-[[chloro-bis(dimethylamino)silyl]-bis(dimethylamino)silyl]-N-methylmethanamine
• CAS: 145700-15-8
• 化学式: C₁₀H₃₀ClN₅Si₂
• 分子量: 312.006
• InChiKey: NGBPGLNJSMULPS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.01
• 重原子数：
  18
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  16.2
• 氢给体数：
  0
• 氢受体数：
  5

反应信息

• 作为反应物：
  描述：

  二苯基乙炔 、 pentakis(dimethylamino)chlorodisilane 反应 48.0h， 以45%的产率得到2,3,5,6-tetraphenyl-1,1,4,4-tetrakis(dimethylamino)-1,4-disila cyclohexa-2,5-diene
  参考文献：
  名称：

  Synthesis of 1,4-disilacyclohexa-2,5-dienes

  摘要：

  Title Compounds of the type 2,3,5,6-tetraphenyl-1,4-di-X-1,4-di-Y-1,4-disilacyclohexa-2,5-diene wherein X = Y = NMe2 (4): X NMe2. Y = Cl (cis, trans-5) X = NMe2, Y = Me [(trans)-6] and X = t-Bu. Y = Cl (trans-8) were synthesized from Si-2(NMe2)(5)Cl, sym-Si-2(NMe2)(4)Cl-2, sym-Si-2(NMe2)(4)Me-2, and sym-Si2Cl4(t-Bu)2, respectively. in the presence of diphenylacetylene at 200 degreesC. Similarly the analogous title compound from the combination of 1-phenyl-1-propyne and Si-2(NMe2)(5)Cl [X = Y = NMe2 (cis and trans-7) was synthesized. In all cases where cis/trans diastereomers could arise from two different silicon substituents (5, 6 8) the trans isomer was the sole or dominant product. Evidence for the intermediacy of the silylene Si(NMe2)(2) in these reactions was gained from a trapping experiment. Compound 4 upon treatment with SiCl4 SiBr4 or PI3 provided the corresponding 1,1,4,4-tetrahalo derivatives 9a-c, respectively. Treatment of 4 with MeOH or PhOH gave the 1.1.4.4-tetramethoxy and tetraphenoxy analogues 9d and 9e, respectively. The tetrachloro derivative 9a upon LAH reduction led to the corresponding tetrahydro compound 10. while the reaction of 9a with H2O gave the tetrahydroxy derivative 11. Allowing (trans)-6 to react with SiCl4 provided a ca. 1:1 cis/trans ratio of the derivative 12 in which X = Cl. Y = Me. and possible pathways that rationalize this loss of stereochemistry are proposed. Synthesis of trans-13 in which X = t-Bu. Y = H was achieved by LAH reduction of 8. All of the title compounds except 8 experience free phenyl rotation at room temperature. At - 30 degreesC this rotation in 8 is essentially halted. The molecular structures of 4, 8. 9c, 9e, 10 and 13 were determined by X-ray crystallography. (C) 2002 Published by Elsevier Science B.V.

  DOI：

  10.1016/s0022-328x(02)01142-7
• 作为产物：
  描述：

  六氯乙硅烷 、 lithium dimethylamide 以 正己烷 为溶剂， 生成 pentakis(dimethylamino)chlorodisilane
  参考文献：
  名称：

  PENTAKIS(DIMETHYLAMINO) DISILANE PRECURSOR COMPRISING COMPOUND AND METHOD FOR THE PREPARATION THEREOF

  摘要：

  五(二甲基胺基)二硅烷是一种化合物，其通式为(1): Si2(NMe2)5Y，其中Y可选自于H、Cl或氨基。该化合物的制备方法以及其用于制造SiN或SiON的栅介电膜或刻蚀停止介电膜的用途。

  公开号：

  US20100016620A1

文献信息

• Pentakis(dimethylamino) disilane precursor comprising compound and method for the preparation thereof
  申请人：L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude

  公开号：US08153832B2

  公开（公告）日：2012-04-10

  Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.

  Pentakis(dimethylamino) disilane的通式为（1）：Si2（NMe2）5Y，其中Y选自包括H，Cl或氨基的组。该化合物的制备方法以及其用于制造SiN或SiON的栅介电膜或刻蚀停止介电膜。
• METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND/OR SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION
  申请人：Dussarrat Christian

  公开号：US20100221428A1

  公开（公告）日：2010-09-02

  Pentakis(dimethylamino) disilane comprising compound is used along with a nitrogen containing gas and optionally an oxygen containing gas for SiN (and optionally SiON) film deposition by CVD.

  Pentakis(dimethylamino) disilane 包含化合物，与含氮气体和可选的含氧气体一起用于通过CVD沉积SiN（和可选的SiON）薄膜。
• Method for depositing silicon nitride films and/or silicon oxynitride films by chemical vapor deposition
  申请人：Dussarrat Christian

  公开号：US08377511B2

  公开（公告）日：2013-02-19

  Disclosed are CVD deposition of SiN and SiON films using pentakis(dimethylamino)disilane compounds along with a nitrogen containing gas and optionally an oxygen containing gas.

  本发明涉及使用五(二甲基氨基)二硅烷化合物，以及含氮气体和可选的含氧气体进行SiN和SiON薄膜的CVD沉积。
• WO2007/112779
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• USRE045839E1
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